Observation of quantum wire formation at intersecting quantum wells

We report the first observation of a quantum bound state formed at the junction of two intersecting quantum wells in the shape of a T. The atomically precise T junctions are fabricated by a novel cleaved edge overgrowth process in the AlGaAs/GaAs system. The identification of bound states with energies in excess of 20 meV is made by optical emission and absorption spectroscopy. Such quantum wire states are caused by the unique confinement of the lowest state wave function to the region of the T junction.

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