Study of silicon thickness optimization for LSST

Sensors for the LSST camera require high quantum efficiency (QE) extending into the near-infrared. A relatively large thickness of silicon is needed to achieve this extended red response. However, thick sensors degrade the point spread function (PSF) due to diffusion and to the divergence of the fast f/1.25 beam. In this study we examine the tradeoff of QE and PSF as a function of thickness, wavelength, temperature, and applied electric field for fully-depleted sensors. In addition we show that for weakly absorbed long-wavelength light, optimum focus is achieved when the beam waist is positioned slightly inside the silicon.