Effects of focused ion beam irradiation on MOS transistors

The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 /spl mu/m minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga/sup +/ focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated.

[1]  Daniel M. Fleetwood,et al.  Effects of device scaling and geometry on MOS radiation hardness assurance , 1993 .

[2]  D. Dimaria,et al.  Temperature dependence of trap creation in silicon dioxide , 1990 .

[3]  Eduard A. Cartier,et al.  Anode hole injection and trapping in silicon dioxide , 1996 .

[4]  Focused-ion-beam fuse cutting for redundancy technology , 1988 .

[5]  Ann N. Campbell,et al.  Electrical biasing and voltage contrast imaging in a focused ion beam system , 1995 .

[6]  E. Takeda,et al.  An erase model in double poly-Si gate n-channel FAMOS devices , 1978, IEEE Transactions on Electron Devices.

[7]  I. Tsong,et al.  Absolute photon yields in the sputter-induced optical emission process , 1978 .

[8]  Daniel M. Fleetwood,et al.  Effects of interface traps and border traps on MOS postirradiation annealing response , 1995 .

[9]  P. S. Winokur,et al.  Correlating the Radiation Response of MOS Capacitors and Transistors , 1984, IEEE Transactions on Nuclear Science.

[10]  Daniel M. Fleetwood.  Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices , 1989 .

[11]  Roy H. Propst,et al.  A novel method for depth profiling and imaging of semiconductor devices using capacitive coupling voltage contrast , 1987 .

[12]  Scofield,et al.  Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors. , 1990, Physical review letters.

[13]  Dim-Lee Kwong,et al.  Suppressed Process-Induced Damage in N2O-annealed SiO2 Gate Dielectrics , 1995 .

[14]  F. V. Thome,et al.  High-temperature silicon-on-insulator electronics for space nuclear power systems: requirements and feasibility , 1988 .