Introduction rates of radiation defects in electron irradiated semiconductor crystals of n-Si and n-GaP
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C. Rhodes | G. Amatuni | B. Grigoryan | N. Grigoryan | A. Sahakyan | H. Yeritsyan | V. Harutyunyan | V. V. Arzumanyan | V. Tsakanov | V. Arzumanyan | V. Tsakanov