A 2.4 GHz fully integrated CMOS power amplifier using capacitive cross-coupling

The paper presented a 2.4GHz fully integrated CMOS power amplifier using capacitive cross-coupling, fabricated in 0.18µm CMOS. With a 3.3-V supply voltage, PAEmax and PAE at 1dB compression point are 34.3% and 26.8%. P1dB, Psat, and PG are 25.2dBm, 27.7dBm and 26.5dB, respectively. The advantages of the proposed capacitive-cross-coupled PA are the improvement of reverse isolation and the area saving.

[1]  Bumman Kim,et al.  A single-chip linear CMOS power amplifier for 2.4 GHz WLAN , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[2]  Domine M. W. Leenaerts,et al.  A 2.4-GHz 0.18-/spl mu/m CMOS self-biased cascode power amplifier , 2003 .

[3]  Debopriyo Chowdhury,et al.  A 90nm CMOS power amplifier for 802.16e (WiMAX) applications , 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

[4]  Lawrence E. Larson,et al.  Fully integrated dual-band power amplifiers with on-chip baluns in 65nm CMOS for an 802.11n MIMO WLAN SoC , 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

[5]  S. Mehta,et al.  A single-chip CMOS direct-conversion transceiver for 900 MHz spread-spectrum digital cordless phones , 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).

[6]  Gang Liu,et al.  Fully Integrated CMOS Power Amplifier With Efficiency Enhancement at Power Back-Off , 2008, IEEE Journal of Solid-State Circuits.

[7]  Ockgoo Lee,et al.  A 2.4 GHz Fully Integrated Linear CMOS Power Amplifier With Discrete Power Control , 2009, IEEE Microwave and Wireless Components Letters.

[8]  Ali M. Niknejad,et al.  A single-chip highly linear 2.4GHz 30dBm power amplifier in 90nm CMOS , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.