论文信息 - First-principles study of near surface point defects stability in Si (100) and SiGe(100) - 字舞流文

First-principles study of near surface point defects stability in Si (100) and SiGe(100)

P. Pochet | A. Dkhissi | A. Estève | A. Chikouche | M. Rouhani | G. Landa | S. Fetah