Spatial variation of the work function in nano-crystalline TiN films measured by dual-mode scanning tunneling microscopy
暂无分享,去创建一个
Takashi Matsukawa | Meishoku Masahara | Koichi Fukuda | Tetsuya Tada | K. Fukuda | T. Matsukawa | M. Masahara | T. Tada | Leonid Bolotov | L. Bolotov
[1] A. Stemmer,et al. Resolution and contrast in Kelvin probe force microscopy , 1998 .
[2] S. Heike,et al. Atomic resolution noncontact atomic force/scanning tunneling microscopy using a 1 MHz quartz resonator , 2003 .
[3] K. Wandelt. R. Vanselow, R. Howe (Eds.): Chemistry and Physics of Solid Surfaces VII, Vol. 10 aus der Reihe: Springer Series in Surface Science, Springer‐Verlag, Berlin, Heidelberg, New York 1988. 616 Seiten. Preis: 159,— DM. , 1990 .
[4] K. Wandelt. The local work function : Concept and implications , 1997 .
[5] K. Wandelt. Atomic Scale Surface Characterization with Photoemission of Adsorbed Xenon (PAX) , 1990 .
[6] J. Jia,et al. Elemental contrast of local work function studied by scanning tunneling microscopy , 1997 .
[7] D. Moraru,et al. Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope , 2008 .
[8] G. Binnig,et al. SCANNING TUNNELING MICROSCOPY , 1983 .
[9] Jörgen Olsson,et al. Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes , 2004 .
[10] Masami Ohnishi,et al. Resistivities of titanium nitride films prepared onto silicon by an ion beam assisted deposition method , 2004 .
[11] J. A. Diniz,et al. Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function , 2012 .
[12] J. Jia,et al. Variation of the local work function at steps on metal surfaces studied with STM , 1998 .
[13] T. Tada,et al. Electrostatic Potential Fluctuations on Oxide-Passivated Si(111) Surfaces Measured Using Integrated Scanning Probe Microscopy , 2011 .
[14] K. Endo,et al. Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels , 2014 .
[15] Yoshitaka Tsunashima,et al. Improvement of threshold voltage deviation in damascene metal gate transistors , 2001 .
[16] D. F. Ogletree,et al. Sensing dipole fields at atomic steps with combined scanning tunneling and force microscopy. , 2005, Physical Review Letters.
[17] P. Avouris,et al. STM studies of the interaction of surface state electrons on metals with steps and adsorbates , 1995 .
[18] M. Tomitori,et al. Bias dependence of Si(111)7×7 images observed by noncontact atomic force microscopy , 2000 .
[19] E. Suzuki,et al. A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors , 2009 .
[20] K. Banerjee,et al. Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for SRAM reliability , 2008, 2008 IEEE International Electron Devices Meeting.
[21] Burnham,et al. Work-function anisotropies as an origin of long-range surface forces. , 1992, Physical review letters.
[22] S. Chhun,et al. Characterization of electrical and crystallographic properties of metal layers at deca-nanometer scale using Kelvin probe force microscope , 2006 .
[23] T. Tada,et al. Measurements of Electrostatic Potential Across p–n Junctions on Oxidized Si Surfaces by Scanning Multimode Tunneling Spectroscopy , 2010 .
[24] Chih-Hong Hwang,et al. Effect of Fin Angle on Electrical Characteristics of Nanoscale Round-Top-Gate Bulk FinFETs , 2007, IEEE Transactions on Electron Devices.
[25] T. An,et al. Atomically resolved imaging by low-temperature frequency-modulation atomic force microscopy using a quartz length-extension resonator. , 2008, The Review of scientific instruments.
[26] C. Chan,et al. Relationship between surface dipole, work function and charge transfer: Some exceptions to an established rule , 2003 .
[27] T. Kanayama,et al. Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy , 2011 .
[28] K. Suguro,et al. Work function controlled metal gate electrode on ultrathin gate insulators , 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
[29] M. Sasaki,et al. Local Tunneling Barrier Height Observations on Ni3Al(111) , 2006 .