论文信息 - Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes

Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes

Efficient electroluminescence with power efficiency up to 0.12% is observed from silicon pn diodes prepared by boron implantation with boron concentrations above the solubility limit at the postimplantation annealing temperature. The electroluminescence spectra exhibit a transition from two bound-exciton bands towards the free electron-hole pair recombination with an anomalous increase in the total intensity with increasing temperature. The implantation dose and temperature dependences of the relative peak intensities provide evidence for the relevance of excitonic traps as a supply for free electron-hole pairs and thus for the origin of the enhanced electroluminescence at elevated temperatures.

[1] S. Solmi,et al. High‐concentration boron diffusion in silicon: Simulation of the precipitation phenomena , 1990 .

[2] S. Pizzini,et al. Efficient silicon light-emitting diode with temperature-stable spectral characteristics , 2003 .

[3] Kveder,et al. Dislocation-related electroluminescence at room temperature in plastically deformed silicon. , 1995, Physical review. B, Condensed matter.

[4] High Efficiency Light Emission Devices in Silicon , 2003 .

[5] Lorenzo Pavesi,et al. TOPICAL REVIEW: Will silicon be the photonic material of the third millenium? * , 2003 .

[6] M. Green,et al. Efficient silicon light-emitting diodes , 2001, Nature.

[7] S. Solmi,et al. Diffusion of boron in silicon during post-implantation annealing , 1991 .

[8] Jeng,et al. Strain-induced quantum confinement of carriers due to extended defects in silicon. , 1990, Physical review. B, Condensed matter.

[9] G. Shao,et al. An efficient room-temperature silicon-based light-emitting diode , 2001, Nature.

[10] Albert Polman,et al. Teaching silicon new tricks , 2002, Nature materials.

[11] Thomas Dekorsy,et al. Bound-exciton-induced current bistability in a silicon light-emitting diode , 2003 .

[12] G. Davies,et al. The optical properties of luminescence centres in silicon , 1989 .