论文信息 - An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics

An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics

Asymmetric doped channel metal oxide semiconductor field effect transistors (MOSFETs) have recently been investigated by several authors in bulk and silicon-on-insulator (SOI) technologies as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage rolloff issues in deep sub-micrometer devices. In this paper, the DC and microwave characteristics of the asymmetric doped channel fully depleted (FD) SOI MOSFET are presented and compared to conventional uniformly doped FD SOI MOSFET.

Jean-Pierre Raskin | Morin Dehan

[1] J. Raskin,et al. Determining the reference impedance of on-wafer TLR calibrations on tossy substrates , 1996, 1996 26th European Microwave Conference.

[2] M. Y. Hong. Simulation and fabrication of submicron channel length DMOS transistors for analog applications , 1993 .

[3] S. M. Sze,et al. Physics of semiconductor devices , 1969 .

[4] J. Raskin,et al. Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling , 1998 .

[5] O. Faynot,et al. Fully-depleted 0.25 /spl mu/m SOI devices for low power RF mixed analog-digital circuits , 1998, 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).

[6] S. Odanaka,et al. Potential design and transport property of 0.1-/spl mu/m MOSFET with asymmetric channel profile , 1997 .

[7] J.-P. Raskin,et al. Microwave Integrated CMOS Oscillators on Silicon-on-Insulator Substrate , 2000, 2000 30th European Microwave Conference.

[8] R. Logan,et al. RF potential of a 0.18-/spl mu/m CMOS logic technology , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[9] M. Hargrove,et al. RF potential of a 0.18-/spl mu/m CMOS logic device technology , 2000 .

[10] Denis Flandre,et al. An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics , 1999 .