Investigation of ICP dry etching of InAs/GaSb type-II superlattice LWIR photodetector
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Jong Hwa Choi | Han Jung | Sun Ho Kim | Young Ho Kim | Hyun Jin Lee | Young Chul Kim | Jun Ho Eom | Hyun Chul Jung | Ko Ku Kang | Seong Min Ryu | Tae Hee Lee | Jong Gi Kim | Ahreum Jang
[1] Piotr Martyniuk,et al. InAs/GaSb type-II superlattice infrared detectors: three decades of development , 2017, Defense + Security.
[2] Brendan T. Marozas,et al. Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors , 2017, Defense + Security.
[3] Sonatan Das,et al. Inductively coupled CH 4 /H 2 plasma etching process for mesa delineation of InAs/GaSb type‐II superlattice pixels , 2019, Micro & Nano Letters.
[4] P. Martyniuk,et al. Barrier infrared detectors , 2014 .
[5] L. Langof,et al. Type II superlattice technology for LWIR detectors , 2016, SPIE Defense + Security.
[6] Alexander Soibel,et al. Inductively coupled plasma etching for delineation of InAs/GaSb pixels , 2012, Other Conferences.
[7] Manijeh Razeghi,et al. Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays , 2009, OPTO.
[8] Alexander Soibel,et al. Low dark current long-wave infrared InAs/GaSb superlattice detectors , 2010 .
[9] J. Nah,et al. Dark current improvement due to dry-etch process in InAs/GaSb type-II superlattice LWIR photodetector with nBn structure , 2018, Infrared Physics & Technology.