Optimized pad design for millimeter-wave applications with a 65nm CMOS RF technology

Millimeter-wave pads based on a 65nm CMOS technology from STMicroelectronics have been designed and measured. A pad was optimized to minimize losses caused by a ground shield and by the conductive substrate. Modelling techniques and special cares to design a millimeter pad with a minimum of effects are highlighted. The goal is to integrate this pad in active devices such as a power amplifier (PA) or a low noise amplifier (LNA). The frequency response shows that the intrinsic capacitance of an optimum pad does not exceed 17fF at 60GHz. The aimed application is the unlicensed band around 60GHz suitable for Wireless Personal Area Network application (WPAN).

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