论文信息 - All-epitaxial growth of orientation-patterned gallium phosphide (OPGaP)

All-epitaxial growth of orientation-patterned gallium phosphide (OPGaP)

Significant advances have been made in the quality of orientation-patterned gallium phosphide quasi-phasematched structures grown by MBE through the use of improved phosphorus and silicon cells, and preliminary bulk HVPE growth results are promising.

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