A 10 Gb/s 12x12 cross-point switch implemented with AlGaAs/GaAs heterojunction bipolar transistors

A 12x12 cross-point switch is reported which operates with data rate per channel of 10 Gb/s. The aggregate data rate for the switch, 120 Gb/s, is one of the highest of any reported IC. The circuit is based on AlGaAs/GaAs HBT technology and employs a double switching architecture to minimize jitter. An rms jitter below 4 psec has been demonstrated.

[1]  G.S. La Rue,et al.  Gigabit complementary HFET communication circuits: 16:1 multiplexer, 1:16 demultiplexer and 16/spl times/16 crosspoint switch , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

[2]  R. Savara,et al.  A 2.5 Gb/s 16/spl times/16 bit crosspoint switch with fast programming , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.

[3]  K. S. Lowe A GaAs HBT 16/spl times/16 10-Gb/s/channel crosspoint switch , 1997 .