On the geometric component of charge-pumping current in MOSFETs
暂无分享,去创建一个
[1] R.W. Dutton,et al. MOS Pass transistor turn-off transient analysis , 1986, IEEE Transactions on Electron Devices.
[2] W. Richards,et al. Geometric components of charge pumping current in SOS devices , 1989 .
[3] Soo-Young Oh,et al. Transient analysis of MOS transistors , 1980 .
[4] G. Groeseneken,et al. A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.
[5] M. Ancona,et al. Determination of interface trap capture cross sections using three-level charge pumping , 1990, IEEE Electron Device Letters.
[6] W. Kosonocky,et al. Free charge transfer in charge-coupled devices , 1972 .
[7] J. Brugler,et al. Charge pumping in MOS devices , 1969 .
[8] Guido Groeseneken,et al. Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors , 1991 .
[9] Transient Two-Dimensional Numerical Analysis of the Charge-Pumping Experiment , 1992, ESSDERC '92: 22nd European Solid State Device Research conference.
[10] M. Lenzlinger,et al. Charge Transfer in Charge‐Coupled Devices , 1971 .