II-1 – Glow Discharge Sputter Deposition

[1]  T. Tisone,et al.  Low-voltage triode sputtering and backsputtering with a confined plasma: Part IV. Heat transfer characteristics , 1974 .

[2]  D. Teer,et al.  The Role of Neutral Atoms in Ion Plating , 1976 .

[3]  C. Baumberger,et al.  Ferroelectricity of Barium Titanate Thin Films of less than One Micron Thickness , 1967 .

[4]  G. Carter,et al.  The equilibrium topography of sputtered amorphous solids III. Computer simulation , 1972 .

[5]  J. Coburn A System for Determining the Mass and Energy of Particles Incident on a Substrate in a Planar Diode Sputtering System , 1970 .

[6]  V. Williams High Conductivity Transparent Contacts to ZnS , 1966 .

[7]  P. D. Davidse,et al.  Equivalent dc Sputtering Yields of Insulators , 1967 .

[8]  W. Brandt Channeling in Crystals , 1968 .

[9]  T. L. Thomas,et al.  Effects of Contamination on Langmuir Probe Measurements in Glow Discharge Plasmas , 1970 .

[10]  D. Teer Adhesion of Ion Plated Films and Energies of Deposition , 1977 .

[11]  J. L. Vossen,et al.  A sputtering technique for coating the inside walls of through-holes in substrates , 1974 .

[12]  E. Lugujjo,et al.  Backscattering analysis of the composition of silicon‐nitride films deposited by rf reactive sputtering , 1976 .

[13]  J. J. Cuomo,et al.  Influence of sputtering parameters on the composition of multicomponent films , 1975 .

[14]  N. L. Rhodes,et al.  A Single‐Coil Probe Damper for Pulsed Nuclear Magnetic Resonance , 1971 .

[15]  R. Jones,et al.  Argon content of SiO 2 , films deposited by RF sputtering in argon , 1970 .

[16]  D. B. Fraser,et al.  Highly Conductive, Transparent Films of Sputtered In2 − x Sn x O 3 − y , 1972 .

[17]  L. Cordes EVIDENCE OF EXCESS SILICON IN REACTIVELY SPUTTERED SILICON NITRIDE FILMS , 1967 .

[18]  A. G. Blachman dc Bias-Sputtered Aluminum Films , 1973 .

[19]  E. Kay,et al.  High Resistivity Transparent ZnO Thin Films , 1970 .

[20]  R. C. Sun,et al.  Internal stresses and resistivity of low‐voltage sputtered tungsten films , 1973 .

[21]  R. Kelly,et al.  Preferential oxygen sputtering from Nb2O5 , 1976 .

[22]  D. S. Campbell,et al.  Amorphous PbTiO capacitors , 1968 .

[23]  O. Almén,et al.  Collection and Sputtering Experiments with Noble Gas Ions , 1961 .

[24]  R. Bunshah,et al.  Synthesis of dispersion‐strengthened alloys by the activated reactive evaporation process from a single rod‐fed electron beam source , 1975 .

[25]  E. Kay Analysis of Gas Incorporation in Thin Films , 1970 .

[26]  V. E. Krohn Secondary ion emission , 1976 .

[27]  S. Ingrey,et al.  Birefringent waveguides prepared by reactive sputtering of niobium in O(2)-N(2) mixtures. , 1976, Applied optics.

[28]  D. Mckenzie,et al.  The dc sputter coating of solar‐selective surfaces onto tubes , 1976 .

[29]  M. Witcomb Sputter etch profiles of spheres, cylinders and slab-like silica targets , 1976 .

[30]  L. Holland Substrate treatment and film deposition in ionized and activated gas , 1975 .

[31]  H. B. Sachse,et al.  Determinations of Stoichiometric Variations in Sputtered Oxide Films , 1970 .

[32]  L. F. Donaghey,et al.  Effect of target oxidation on reactive sputtering rates of titanium in argon-oxygen plasmas , 1976 .

[33]  R. Kelly,et al.  On the increase in the electrical conductivity of MoO3 and V2O5 following ion bombardment. Studies on bombardment-enhanced conductivity-I , 1972 .

[34]  D. Campbell,et al.  The mechanism of reactive sputtering , 1968 .

[35]  L. Feinstein,et al.  Structure and electrical properties of Ta films sputtered in ArO2 , 1972 .

[36]  J. Coburn Sputtering in the surface analysis of solids: A discussion of some problems , 1976 .

[37]  H. F. Winters,et al.  Influence of the altered layer on depth profiling measurements , 1976 .

[38]  O. Christensen Sur quelques facteurs intervenant dans le bombardement de couches pulvérisées , 1975 .

[39]  J. Kistemaker,et al.  FAST ION SCATTERING AGAINST METAL SURFACES. , 1966 .

[40]  I. Tsong Photon Emission from Sputtered Particles during Ion Bombardment , 1971, October 16.

[41]  L. I. Maissel,et al.  Dielectric Thin Films through rf Sputtering , 1966 .

[42]  J. J. Cuomo,et al.  Incorporation of rare gases in sputtered amorphous metal films , 1977 .

[43]  J. F. Gibbons,et al.  Ion implantation in semiconductors—Part I: Range distribution theory and experiments , 1968 .

[44]  J. Ziegler,et al.  A new concept for solar energy thermal conversion , 1975 .

[45]  G. Jackson,et al.  A radio frequency dielectric sputtering system with non-grounded electrodes , 1968 .

[46]  C. C. Chang,et al.  Structure and chemistry of silicon surfaces after pre- and backsputtering, studied with Auger spectroscopy, ellipsometry, and RHEED , 1973 .

[47]  E. Gillam The penetration of positive ions of low energy into alloys and composition changes produced in them by sputtering , 1959 .

[48]  F. G. Peters,et al.  Preparation of Oxide Glass Films by Reactive Sputtering , 1963 .

[49]  J. Hanak,et al.  Effect of secondary electrons and negative ions on sputtering of films , 1976 .

[50]  P. Bugnet,et al.  Variations du pourcentage de ZnS dans des solutions solides de ZnxCd1−xS obtenues par pulvérisation cathodique reactive , 1973 .

[51]  E. A. Buvinger ANALYSIS OF THIN FILMS OF TANTALUM REACTIVELY SPUTTERED IN NITROGEN ATMOSPHERE , 1965 .

[52]  W. Sproul,et al.  Reactive sputtering of TiC with oxygen , 1975 .

[53]  R. Holm,et al.  ESCA studies on changes in surface composition under ion bombardment , 1977 .

[54]  J. J. Hauser,et al.  Getter Sputtering for the Preparation of Thin Films of Superconducting Elements and Compounds , 1964 .

[55]  H. Lüthje,et al.  The influence of the target material on sputter etching processes , 1975 .

[56]  J. Greiner Josephson Tunneling Barriers by rf Sputter Etching in an Oxygen Plasma , 1971 .

[57]  P. J. Burkhardt,et al.  Thermal Expansion of Sputtered Silicon Nitride Films , 1969 .

[58]  R. Goutte,et al.  The influence of chemically active gas on the light emission of metallic targets bombarded by positive ions , 1975 .

[59]  L. Holland,et al.  Getter sputtering—a review , 1974 .

[60]  R. Kelly,et al.  On the role of recoil implantation in altering the stoichiometry of a bombarded solid , 1976 .

[61]  A. G. Blachman Stress and resistivity control in sputtered molybdenum films and comparison with sputtered gold , 1971 .

[62]  Per G. Glöersen Ion Beam Etching , 1975, Atomic Layer Processing.

[63]  V. Orlinov,et al.  D.C. cathode sputtering: influence of the oxygen content in the gas flow on the discharge current , 1976 .

[64]  Y. Shintani,et al.  Behaviours of High-Energy Electrons and Neutral Atoms in the Sputtering of BaTiO3 , 1975 .

[65]  R. Bunshah,et al.  The Effect of Substrate Temperature on the Structure of Titanium Carbide Deposited by Activated Reactive Evaporation , 1972 .

[66]  Yoichi Murayama,et al.  Thin film formation of In2O3, TiN, and TaN by rf reactive ion plating , 1975 .

[67]  M. Robinson,et al.  Sputtering Experiments with 1‐ to 5‐keV Ar+ Ions. III. Monocrystal Targets of the Hexagonal Metals Mg, Zn, Zr, and Cd , 1968 .

[68]  M. Hecq,et al.  Aspects chimiques de la formation de films d'oxydes d'etain par pulverisation reactive , 1972 .

[69]  F. Smith Structure and Electrical Properties of Sputtered Films of Hafnium and Hafnium Compounds , 1970 .

[70]  C. Weissmantel Reactive film preparation , 1976 .

[71]  R. S. Nelson,et al.  Surface damage and topography changes produced during sputtering , 1973 .

[72]  W. Hoffmeister,et al.  Determination of the argon content of sputtered SiO2 films by X-ray fluorescence , 1969 .

[73]  J. Cuomo,et al.  Origin and effects of negative ions in the sputtering of intermetallic compounds , 1977 .

[74]  E. Bauer,et al.  Quantitative aspects of Ion Scattering Spectroscopy (ISS) , 1975 .

[75]  G. Lempérière,et al.  DC diode sputtering of titanium: determination of optimal deposition conditions by electrical and spectroscopic investigations , 1976 .

[76]  W. Patterson,et al.  The Sputtering of Nickel–Chromium Alloys , 1967 .

[77]  G. S. Anderson Temperature Dependence of the Ag/Cu Sputtering Ratio for the Eutectic , 1969 .

[78]  F. Shinoki,et al.  Mechanism of rf reactive sputtering , 1975 .

[79]  I. Brodie,et al.  Production of High-Energy Neutral Atoms by Scattering of Ions at Solid Surfaces and Its Relation to Sputtering , 1968 .

[80]  A. Benninghoven Zum Mechanismus der Ionenbildung und Ionenemission bei der FestkörperzerstÄubung , 1969 .

[81]  D. Oblas,et al.  Argon entrapment in metal films by dc triode sputtering , 1975 .

[82]  P. A. B. Toombs The choice between single-ended and balanced r.f. sputtering systems , 1968 .

[83]  E. Kornelsen THE IONIC ENTRAPMENT AND THERMAL DESORPTION OF INERT GASES IN TUNGSTEN FOR KINETIC ENERGIES OF 40 EV TO 5 KEV , 1964 .

[84]  R. Kelly,et al.  Studies on bombardment-enhanced conductivity. IV: IV. On the chemical state of oxygen-bombarded Nb2O5 , 1975 .

[85]  G. Wehner,et al.  Alloy Sputtering Studies with in situ Auger Electron Spectroscopy , 1971 .

[86]  W. Westwood,et al.  Structural and Electrical Properties of Tantalum Films Sputtered in Oxygen‐Argon Mixtures , 1971 .

[87]  M. Witcomb The development of ion-bombardment surface structures on stainless steel , 1974 .

[88]  J. S. Preston Constitution and mechanism of the selenium rectifier photocell , 1950, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[89]  G. J. Kominiak Silicon Nitride Films by Direct RF Sputter Deposition , 1975 .

[90]  Leon I. Maissel,et al.  Sputter-Etching of Heterogeneous Surfaces , 1972, IBM J. Res. Dev..

[91]  W. Westwood,et al.  Detection of sputtered atoms by atomic absorption spectroscopy , 1971 .

[92]  W. Westwood,et al.  Formation of PtO films by reactive sputtering , 1974 .

[93]  J. Heller,et al.  Reactive sputtering of metals in oxidizing atmospheres , 1973 .

[94]  R. Bunshah,et al.  Synthesis and morphology of various carbides in the Ta–C system , 1975 .

[95]  D. Landolt,et al.  Quantitative auger electron spectroscopy analysis of AgPd and NiPd alloys , 1975 .

[96]  B. Chapman,et al.  Electron effects in sputtering and cosputtering , 1974 .

[97]  A. Noreika,et al.  Dielectric Properties of Reactively Sputtered Films of Aluminum Nitride , 1969 .

[98]  P. Schmidt Superconductivity of transition metal thin films deposited by noble gas ion beam sputtering , 1973 .

[99]  G. Carter The influence of surface diffusion on topography development of an amorphous solid during sputtering , 1976 .

[100]  H. Werner The use of secondary ion mass spectrometry in surface analysis , 1975 .

[101]  S. Nagata,et al.  Structure and Deposition Mechanism of Molybdenum Nitride Films Prepared by Reactive Sputtering , 1974 .

[102]  J. Thornton,et al.  Transparent conductive Sn‐doped indium oxide coatings deposited by reactive sputtering with a post cathode , 1976 .

[103]  B. Sopori,et al.  Some investigations on deposition and etching profiles in masked rf sputtering , 1977 .

[104]  R. Burger,et al.  Application of the Ion Bombardment Cleaning Method to Titanium, Germanium, Silicon, and Nickel as Determined by Low‐Energy Electron Diffraction , 1958 .

[105]  D. Oblas,et al.  ARGON CONCENTRATION IN TUNGSTEN FILMS DEPOSITED BY dc SPUTTERING. , 1970 .

[106]  R. Bunshah,et al.  Synthesis of various oxides in the Ti−O system by reactive evaporation and activated reactive evaporation techniques , 1975 .

[107]  W. A. Pliskin,et al.  Preparation and Characterization of Manganese Oxide Thin Films , 1967 .

[108]  G. Carter,et al.  The equilibrium topography of sputtered amorphous solids II , 1969 .

[109]  T. Kihara THE MATHEMATICAL THEORY OF ELECTRICAL DISCHARGES IN GASES , 1952 .

[110]  H. F. Winters,et al.  Sputtering of chemisorbed gas (nitrogen on tungsten) by low‐energy ions , 1974 .

[111]  W. D. Westwood,et al.  Glow discharge sputtering , 1976 .

[112]  G. Harding Sputtered metal carbide solar‐selective absorbing surfaces , 1976 .

[113]  F. O. Goodman Scattering of atoms by solid surfaces: Critical review of the lennard-jones, devonshire and strachan theory of inelastic gas-surface interactions, and some improvements , 1971 .

[114]  J. Vossen Contamination in Films Sputtered From Hot-Pressed Targets , 1971 .

[115]  J. Coburn,et al.  PLASMA DIAGNOSTICS OF AN rf-SPUTTERING GLOW DISCHARGE. , 1971 .

[116]  D. Haneman COMPARISON OF STRUCTURES OF SURFACES PREPARED IN HIGH VACUUM BY CLEAVING AND BY ION BOMBARDMENT AND ANNEALING , 1960 .

[117]  R. Roberts Generation of clean surfaces in high vacuum , 1963 .

[118]  C. Corsi,et al.  Surface temperature measurements during thin film deposition by r.f. sputtering , 1975 .

[119]  K. Haq Single−crystal β−SiC films by reactive sputtering , 1975 .

[120]  C. Fritzsche,et al.  Dielectric breakdown of reactively sputtered silicon nitride , 1973 .

[121]  D. Teer The energies of ions and neutrals in ion plating , 1976 .

[122]  E. Kay,et al.  Cation deficiencies in RF sputtered gadolinium iron garnet films , 1969 .

[123]  F. G. Peters,et al.  Devitrification of Tin Oxide Films (Doped and Undoped) Prepared by Reactive Sputtering , 1965 .

[124]  P. Haff,et al.  On the sputtering of binary compounds , 1976 .

[125]  D. Bacon,et al.  High‐Coercive‐Force Rare‐Earth Alloy Films by Getter Sputtering , 1969 .

[126]  D. L. Simms,et al.  Effects of nonradiative de-excitation of excited sputtered atoms near silicon and silicon dioxide surfaces , 1975 .

[127]  W. Westwood,et al.  Investigation of Tantalum Film Properties by Layers , 1971 .

[128]  F. Vrátný Deposition of Tantalum and Tantalum Oxide by Superimposed RF and D ‐C Sputtering , 1967 .

[129]  T. Tisone,et al.  Copper/oxygen glow‐discharge spectrometry , 1977 .

[130]  F. Vrátný,et al.  Tantalum Films Deposited by Asymmetric A‐C Sputtering , 1965 .

[131]  J. Berak,et al.  Utilization of a subliming solid (arsenic) in rf reactive sputtering , 1976 .

[132]  H. S. Butler,et al.  Plasma Sheath Formation by Radio‐Frequency Fields , 1963 .

[133]  P. Clarke Magnetron dc reactive sputtering of titanium nitride and indium–tin oxide , 1977 .

[134]  R. Kelly,et al.  The effect of ion-bombardment on the structure of bi2O3, moo3, teo2, and v2o5 , 1975 .

[135]  S. Hu Properties of Amorphous Silicon Nitride Films , 1966 .

[136]  M. Croset,et al.  Investigation of reactively sputtered silicon nitride films by complementary use of backscattering and nuclear‐reaction microanalysis results , 1976 .

[137]  T. Lakshmanan Optical and Electrical Properties of Semiconducting Cadmium Oxide Films , 1963 .

[138]  Effect of Reactant Nitrogen Pressure on the Microstructure and Properties of Reactively Sputtered Silicon Nitride Films , 1975 .

[139]  J. Coburn,et al.  Diagnostics of an r.f. sputtering glow discharge - correlation between atomic absorption and mass spectrometry , 1975 .

[140]  John R. Hollahan,et al.  Restoration of Optical Properties of Surfaces by Radiofrequency-Excited Oxygen , 1970 .

[141]  I. V. Mitchell,et al.  Gas incorporation in sputtered and evaporated gold films , 1971 .

[142]  K. Manchester Radiotracer Studies of Ion Implanted Profile Build‐Up in Silicon Substrates , 1968 .

[143]  L. F. Donaghey,et al.  Preparation of suboxides in the Ti-O system by reactive sputtering , 1977 .

[144]  W. D. Davis,et al.  Ion Energies at the Cathode of a Glow Discharge , 1963 .

[145]  J. Sosniak Mass Spectrometry of Background Gases in Glow-Discharge Sputtering of Tantalum Thin Films , 1967 .

[146]  D. J. Ball Plasma Diagnostics and Energy Transport of a dc Discharge Used for Sputtering , 1972 .

[147]  J. Shewchun,et al.  Reactivity sputtered tantalum thin film resistors Part 1. Physical and electrical properties , 1971 .

[148]  D. J. Willmott Effect of nitrogen on the electrical and structural properties of triode‐sputtered tantalum films , 1971 .

[149]  D. M. Mattox,et al.  Incorpation of Helium in Deposited Gold Films , 1971 .

[150]  H. Dunlap,et al.  Ion‐induced migration of Cu into Si , 1975 .

[151]  A. Boers,et al.  LOW-ENERGY ION REFLECTION FROM METAL-SURFACES , 1974 .

[152]  D. Malm,et al.  Fabrication of Sputtering Sources by Plasma Spraying: Tantalum‐Hafnium Mixtures , 1971 .

[153]  I. Wilson,et al.  A study of cones developed by ion-bombardment of gold , 1971 .

[154]  J. Vossen Control of Film Properties by rf-Sputtering Techniques , 1971 .

[155]  D. M. Mattox,et al.  Incorporation and behavior of helium in co-deposited films , 1974 .

[156]  L. V. Gregor,et al.  EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING , 1967 .

[157]  Jack E. Houston,et al.  Relationship between sputter cleaning parameters and surface contaminants , 1973 .

[158]  F. Lappé Some physical properties of sputtered PbO2 films , 1962 .

[159]  J. Greene,et al.  Glow Discharge Optical Spectroscopy for Monitoring Sputter Deposited Film Thickness , 1973 .

[160]  J. Duchêne,et al.  R.F. and D.C. reactive sputtering for crystalline and amorphous VO2 thin film deposition , 1972 .

[161]  R. J. Macdonald,et al.  The ejection of atomic particles from ion bombarded solids , 1970 .

[162]  L. Holland,et al.  the properties of some reactively sputtered metal oxide films , 1953 .

[163]  L. Maissel,et al.  Application of RF discharges to sputtering , 1970 .

[164]  L. Maissel,et al.  Techniques for sputtering single and multilayer films of uniform resistivity , 1963 .

[165]  F. Lappe Irreversible änderungen der Elektronenbeweglichkeit in dünnen CdO-Schichten , 1954 .

[166]  R. Kelly,et al.  Photon emission from a bombarded Al target and its dependence on oxygen , 1975 .

[167]  G. N. Jackson,et al.  R.F. sputtering , 1970 .

[168]  D. M. Mattox Fundamentals of Ion Plating , 1973 .

[169]  N. Formigoni,et al.  Charge Phenomena in dc Reactively Sputtered SiO2 Films , 1968 .

[170]  J. Bindell,et al.  Low-voltage triode sputtering with a confined plasma: Part I—geometric aspects of deposition , 1974 .

[171]  S. Vogel,et al.  Sputtered Cadmium Oxide and Indium Oxide/Tin Oxide Films as Transparent Electrodes to Cadmium Sulfide , 1972 .

[172]  J. Cuomo,et al.  Selective resputtering‐induced anisotropy in amorphous films , 1978 .

[173]  J. S. Logan Control of RF sputtered film properties through substrate tuning , 1970 .

[174]  G. Blaise Similarities in photon and ion emissions induced by sputtering , 1976 .

[175]  R. Kelly Theory of thermal sputtering , 1977 .

[176]  J. Harvey,et al.  Sputtering yields of gold and tantalum in argon-oxygen mixtures , 1970 .

[177]  T. Abe,et al.  The deposition rate of metallic thin films in the reactive sputtering process , 1975 .

[178]  G. Betz,et al.  Sputtering of the alloy systems AgAu, AuCu, and AgCu studied by Auger electron spectroscopy , 1976 .

[179]  L. Holland Some characteristics and uses of low‐pressure plasmas in materials science , 1977 .

[180]  Y. Murayama,et al.  Structure of a silicon carbide film synthesized by r.f. reactive ion plating , 1977 .

[181]  C. B. Cooper,et al.  SPUTTERING YIELDS OF SEVERAL SEMICONDUCTING COMPOUNDS UNDER ARGON ION BOMBARDMENT , 1966 .

[182]  R. Bunshah,et al.  Alumina deposition by activated reactive evaporation , 1977 .

[183]  S. Ingrey,et al.  Dielectric properties of films prepared by the reactive sputtering of Ta In O2N2 mixtures , 1975 .

[184]  W. Eckstein,et al.  A mass spectrometric study of neutral−sputtered species in an rf glow discharge sputtering system , 1975 .

[185]  B. L. Martin,et al.  Propriétés diélectriques apparentes de couches minces d'oxyde de titane amorphes synthétisées par condensation de plasmas froids (pulvérisation réactive diode): I. Influence de l'épaisseur du diélectrique , 1972 .

[186]  R. Tauber,et al.  Preparation, Structure, and Properties of Sputtered, Highly Nitrided Tantalum Films , 1968 .

[187]  P.C.Y. Chen Interface instability of r.f. sputtered silicon nitride films on silicon , 1974 .

[188]  W. Westwood,et al.  Effect of Substrate Bias on Tantalum Films Sputtered in an Oxygen‐Argon Mixture , 1971 .

[189]  W. Hauffe,et al.  Development of Relief Structures on Si Surfaces by Ion Bombardment , 1972, December 16, 1972.

[190]  W. Miller,et al.  An investigation of RF sputter etched silicon surfaces using helium ion backscatter , 1975 .

[191]  N. Winograd,et al.  X-ray photoelectron spectroscopic studies of PbO surfaces bombarded with He+, Ne+, Ar+, Xe+ and Kr+ , 1976 .

[192]  R. Kushner,et al.  Ion migration effects in r.f. “sputter cleaning” of dielectric films , 1974 .

[193]  W. Westwood,et al.  Phase composition and conductivity of sputtered tantalum , 1970 .

[194]  R. Frank,et al.  Reactively Sputtered Silicon Oxynitride as a Dielectric Material for Metal‐Insulator‐Metal Capacitors , 1970 .

[195]  G. Wehner,et al.  SPUTTERING BY ION BOMBARDMENT , 1963 .

[196]  L. A. West Relative sputtering yields and quantitative surface analysis by Auger spectroscopy , 1976 .

[197]  J. Heller Deposition of magnetite films by reactive sputtering of iron , 1976 .

[198]  R. Krutenat,et al.  Low‐Energy Ar+ Sputtering Yields of Solid and Liquid Tin , 1970 .

[199]  S. Ingrey,et al.  Effect of pressure on the properties of reactively sputtered Ta2O5 , 1974 .

[200]  M. Ono,et al.  Quantitative auger analysis of copper-nickel alloy surfaces after argon ion bombardment , 1973 .

[201]  F. Vrátný,et al.  Preparation of Hafnium‐Tantalum Nitride Films by Reactive Alloy Sputtering , 1971 .

[202]  R. Bunshah,et al.  Activated Reactive Evaporation Process for High Rate Deposition of Compounds , 1972 .

[203]  H. Pickering Ion sputtering of alloys , 1976 .

[204]  G. Wehner,et al.  Sputtering studies of insulators by means of Langmuir probes , 1965 .

[205]  N. F. Foster The Deposition and Piezoelectric Characteristics of Sputtered Lithium Niobate Films , 1969 .

[206]  R. C. Sun,et al.  The origin of internal stress in low−voltage sputtered tungsten films , 1975 .

[207]  W. Molzen Characterization of transparent conductive thin films of indium oxide , 1975 .

[208]  J. Williams,et al.  Preparation of Thin Mullite Films , 1963 .

[209]  H. Spitzer Superconducting properties and structure of reactively sputtered niobium carbide thin films. , 1973 .

[210]  Donald M. Mattox,et al.  Reactive plasma cleaning of metals , 1977 .

[211]  N. Winograd,et al.  X-ray photoelectron spectroscopic studies of nickel-oxygen surfaces using oxygen and argon ion-bombardment , 1974 .

[212]  L. Maissel,et al.  Thin Films Deposited by Bias Sputtering , 1965 .

[213]  S. Mirsch,et al.  Properties of silicon nitride and silicon oxynitride films prepared by reactive sputtering , 1974 .

[214]  H. Dunstädter Liditabsorption und elektrische Eigenschaften stark gestörter CdO-Schichten , 1954 .

[215]  N. Formigoni,et al.  PREPARATION AND PROPERTIES OF EPITAXIAL FILMS OF FERROELECTRIC Bi4Ti3O12 , 1969 .

[216]  W. Kern,et al.  The Effect of Substrate Bias on the Properties of Reactively Sputtered Silicon Nitride , 1976 .

[217]  J. Coburn,et al.  Positive‐ion bombardment of substrates in rf diode glow discharge sputtering , 1972 .

[218]  H. F. Winters,et al.  Effect of Oxygen on the rf-Sputtering Rate of SiO2 , 1968 .

[219]  L. Holland,et al.  The cleaning of glass in a glow discharge , 1958 .

[220]  Masashi Nakamura,et al.  Improvement of Tantalum Nitride Resistor Film Stability Through Analysis on Plateau Phenomena , 1973 .

[221]  O. C. Yonts,et al.  Surface Cleaning by Cathode Sputtering , 1960 .

[222]  N. Formigoni,et al.  Preparation and Epitaxy of Sputtered Films of Ferroelectric Bi4Ti3O12 , 1970 .

[223]  N. F. Foster Crystallographic Orientation of Zinc Oxide Films Deposited by Triode Sputtering , 1969 .

[224]  I. Brodie,et al.  Substrate Bombardment During RF Sputtering , 1969 .

[225]  J. Vossen Inhibition of chemical sputtering of organics and C by trace amounts of Cu surface contamination , 1976 .

[226]  H. Hotop,et al.  Double ionization in the penning process , 1976 .

[227]  C. B. Cooper,et al.  Mass Spectrometric Study of Sputtering of KB by Low‐Energy Ar+ and Xe+ Ions , 1972 .

[228]  M. Witcomb Prediction of the apex angle of surface cones on ion-bombarded crystalline materials , 1974 .

[229]  H. F. Winters,et al.  Proposed Model for the Composition of Sputtered Multicomponent Thin Films , 1969 .

[230]  M. Robinson,et al.  Sputtering Experiments with 1‐ to 5‐keV Ar+ Ions. II. Monocrystalline Targets of Al, Cu, and Au , 1967 .

[231]  G. Connell,et al.  Use of hydrogenation in structural and electronic studies of gap states in amorphous germanium , 1976 .

[232]  G. E. Becker,et al.  Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon , 1977 .

[233]  Takashi Oohashi,et al.  Protrusion Formation on Metal Targets during Co-Sputtering , 1972 .

[234]  G. Shirn,et al.  Preparation and Properties of Reactively Sputtered Silicon Nitride , 1967 .

[235]  F. Bingham Classical Calculation of Atomic Scattering Parameters , 1967 .

[236]  J. Stuke Die optische Absorptionskonstante von Kadmiumoxyd , 1954 .

[237]  H. Ratinen Determination of the sputtering rate by the fluorescence of sputtered atoms , 1973 .

[238]  M. R. Wormald,et al.  The preparation of tantalum nitride targets by reactive sputtering , 1973 .

[239]  R. J. Sneed,et al.  Deposition of Tantalum, Tantalum Oxide, and Tantalum Nitride with Controlled Electrical Characteristics , 1966 .

[240]  H. Müller Electrical and Optical Properties of Sputtered In2O3 films. I. Electrical Properties and Intrinsic Absorption , 1968 .

[241]  H. Lehmann,et al.  Redeposition—A serious problem in rf sputter etching of structures with micronmeter dimensions , 1977 .

[242]  A. Benninghoven,et al.  Die Analyse monomolekularer FestkörperoberflÄchenschichten mit Hilfe der SekundÄrionenemission , 1970 .

[243]  A. Benninghoven,et al.  Surface investigation of solids by the statical method of secondary ion mass spectroscopy (SIMS) , 1973 .

[244]  G. Helwig Elektrische Leitfähigkeit und Struktur aufgestäubter Kadmiumoxydschichten , 1952 .

[245]  R. Bunshah,et al.  Structure of TiC-Ni coatings synthesized by activated reactive evaporation , 1977 .

[246]  G. Rozgonyi,et al.  Epitaxial Thin Films of ZnO on CdS and Sapphire , 1969 .

[247]  M. L. Lieberman,et al.  Reactively Sputtered Oxide Films , 1969 .

[248]  R. Blickensderfer,et al.  Reactive sputtering of zirconium with oxygen , 1976 .

[249]  H. D. Hagstrum Reflection of Noble Gas Ions at Solid Surfaces , 1961 .

[250]  H. Müller Electrical and Optical Properties of Sputtered In2O3 films. II. Optical Properties in the Near Infrared , 1968 .

[251]  J. Comas,et al.  IMPLANTATION AND DETECTION OF LOW ENERGY ARGON IONS IN SILICON SINGLE CRYSTALS. , 1968 .

[252]  D. Gerstenberg Properties of Anodic Films Formed on Reactively Sputtered Tantalum , 1966 .

[253]  E. Veje,et al.  An experimental study of optical radiation from sputtered species , 1974 .

[254]  G. Blaise,et al.  Adsorption of gases studied by secondary ion emission mass spectrometry , 1975 .

[255]  E. E. Muschlitz Metastable atoms and molecules. , 1968, Science.

[256]  G. Carter,et al.  The growth of topography during sputtering of amorphous solids , 1973 .

[257]  W. Westwood,et al.  A spectroscopic investigation of the reactive sputtering of aluminium , 1971 .

[258]  H. W. Lehmann,et al.  Preparation and properties of reactively co-sputtered transparent conducting films , 1975 .

[259]  F. Jona Preparation and properties of clean surfaces of aluminum , 1967 .

[260]  R. Tsui,et al.  Calculation of Ion Bombarding Energy and Its Distribution in rf Sputtering , 1968 .

[261]  R. Honig Sputtering of Surfaces by Positive Ion Beams of Low Energy , 1958 .

[262]  E. Kay Impact Evaporation and Thin Film Growth in a Glow Discharge , 1963 .

[263]  J. Jones,et al.  The sharpening of field emitter tips by ion sputtering , 1971 .

[264]  N. Olson,et al.  Simultaneous Measurement of Sputtered Constituents of Cu3Au , 1969 .

[265]  D. J. Barber,et al.  Review: Sputtering mechanisms for amorphous and polycrystalline solids , 1973 .

[266]  Y. T. Sihvonen,et al.  Transparent Indium Contacts to CdS , 1960 .

[267]  O. Almén,et al.  SPUTTERING EXPERIMENTS IN THE HIGH ENERGY REGION , 1961 .

[268]  G. Betz,et al.  Studies of surface composition of Ag‐Au, Au‐Cu, and Ag‐Cu alloys after ion bombardment by Auger electron spectroscopy , 1977 .

[269]  J. Keller,et al.  The rf glow‐discharge sputtering model , 1977 .

[270]  N. Chubachi,et al.  The Spatial Distribution of Deposition Rates in the DC Diode Sputtering of ZnO Thin Film , 1972 .

[271]  M. Witcomb Conical topography formed on ion‐etched crystalline surfaces , 1975 .

[272]  J. Cuomo,et al.  Significance of negative ion formation in sputtering and SIMS analysis , 1978 .

[273]  P. N. Baker R.f. sputtered tantalum films deposited in an oxygen doped atmosphere , 1970 .

[274]  J. Ziegler,et al.  Reduction of Ion Sputtering Yield by Special Surface Microtopography , 1977 .

[275]  S. Vogel,et al.  Ferroelectric Thin Films by Reactive Sputtering and High-Temperature Conversion , 1973 .

[276]  J. Leck,et al.  Desorption of gas in the cold cathode ionization gauge , 1955 .

[277]  A. K. Brewer,et al.  The Cathode Region in the Glow Discharge , 1937 .

[278]  Electrical properties and stabilization of sputtered films by inert gas precipitation , 1976 .

[279]  L. V. Gregor,et al.  Silicon Nitride Films by Reactive Sputtering , 1967 .

[280]  P. Sigmund A mechanism of surface micro-roughening by ion bombardment , 1973 .

[281]  F. Keywell Measurements and Collision—Radiation Damage Theory of High-Vacuum Sputtering , 1955 .

[282]  H. Patterson,et al.  Experiments by radioactive tracer methods on sputtering by rare-gas ions , 1962, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[283]  J. Lounsbury Effects of Added O2 upon Argon Emission from an rf Glow Discharge , 1969 .

[284]  A. Benninghoven Beobachtung von oberflächenreaktionen mit der statischen methode der sekundärionen-massenspektroskopie. I die methode , 1971 .

[285]  H. F. Winters,et al.  GAS INCORPORATION INTO SPUTTERED FILMS. , 1967 .

[286]  W. Westwood Porosity in sputtered platinum films , 1974 .

[287]  W. Hardy,et al.  Mass-spectrometric investigations of background gases during the sputtering of tantalum , 1973 .

[288]  R. S. Nowicki,et al.  Effects of dc substrate bias on the properties of rf‐sputtered amorphous germanium ditelluride films , 1974 .

[289]  D. Gerstenberg,et al.  Effects of Nitrogen, Methane, and Oxygen on Structure and Electrical Properties of Thin Tantalum Films , 1964 .

[290]  W. Westwood,et al.  Investigation of the Sputtering of Aluminum Using Atomic‐Absorption Spectroscopy , 1970 .