Synthesis of Gallium Oxide from the Elements at RF Plasma Discharge in the Argon-Oxygen Mixture

Oxide semiconductor research is presently one of the most challenging topics [1] . We are developed a novel PECVD-based method for growth of Ga 2 O 3 epitaxial layers from elemental Ga precursor, avoiding complicated metal-organic reactions typically used in CVD, to reach the best purity and eventually the largest electron mobility of the material [2] , [3] . The envisaged method should be cost-effective and industry-relevant. The fundamental properties of doped with different species Ga 2 O 3 are not completely understood yet. This topic is therefore an interesting scientific challenge.