Optimizing N-p-n and P-n-p heterojunction bipolar transistors for speed
暂无分享,去创建一个
[1] J. Hutchby. High-performance p-n-p AlGaAs/GaAs heterojunction bipolar transistors: A theoretical analysis , 1986, IEEE Electron Device Letters.
[2] H. D. Shih,et al. AlGaAs/GaAs Heterojunction bipolar power transistors , 1985 .
[3] D.L. Miller,et al. GaAs/(GaAl)As heterojunction bipolar transistors using a self-aligned substitutional emitter process , 1986, IEEE Electron Device Letters.
[4] H. Kroemer,et al. Heterostructure bipolar transistors and integrated circuits , 1982, Proceedings of the IEEE.
[5] H. H. Berger,et al. Contact Resistance and Contact Resistivity , 1972 .
[6] K. Brennan,et al. Monte Carlo Investigation of Transient Hole Transport in GaAs , 1984 .
[7] J. S. Blakemore. Semiconducting and other major properties of gallium arsenide , 1982 .
[8] K. G. Ashar,et al. The method of estimating delay in switching circuits and the figure of merit of a switching transistor , 1964 .
[9] K. Hess,et al. Investigation of transient electronic transport in GaAs following high energy injection , 1982, IEEE Transactions on Electron Devices.
[10] H. F. Cooke,et al. Microwave transistors: Theory and design , 1971 .
[11] Peter M. Asbeck,et al. (GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base , 1983 .
[12] P. Dapkus,et al. The performance potential of p-n-p heterojunction bipolar transistors , 1985, IEEE Electron Device Letters.
[13] D.L. Miller,et al. GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers , 1984, IEEE Electron Device Letters.
[14] D. L. Feucht,et al. Performance potential of high-frequency heterojunction transistors , 1970 .