CD reference features with sub-five nanometer uncertainty

The implementation of a new test structure for HRTEM (High-Resolution Transmission Electron Microscopy) imaging, and the use of CD AFM (CD Atomic Force Microscopy) to serve as the transfer metrology, have resulted in reductions in the uncertainties attributed to critical dimension (CD) reference-material features, having calibrated CDs less than 100 nm. The previous generation of reference materials, which was field-tested in 2001, used electrical CD as the transfer metrology. Calibrated CD values were in the range 80 nm to 150 nm and expanded uncertainties were approximately ± 14 nm. The second-generation units, which have now been distributed to selected industry users for evaluation, have uncertainties as low as ±1.5 nm and calibrated CDs as low as 43 nm.

[1]  B. Taylor,et al.  CODATA Recommended Values of the Fundamental Physical Constants 1998*$\dagger$ , 1999 .

[2]  L. W. Linholm,et al.  Test structures for referencing electrical linewidth measurements to silicon lattice parameters using HRTEM , 2002, Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002..

[3]  W. Qin,et al.  Direct space (nano)crystallography via high-resolution transmission electron microscopy , 2000 .

[4]  A. Hunt,et al.  Extraction of critical dimension reference feature CDs from new test structure using HRTEM imaging , 2005, Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005..

[5]  Ronald G. Dixson,et al.  Reference metrology using a next-generation CD-AFM , 2004, SPIE Advanced Lithography.

[6]  L.W. Linholm,et al.  Measurement of the linewidth of electrical test-structure reference features by automated phase-contrast image analysis , 2002, Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002..

[7]  Ronald Dixson,et al.  CD-AFM reference metrology at NIST and SEMATECH , 2005, SPIE Advanced Lithography.

[8]  Michael T. Postek,et al.  Active monitoring and control of electron-beam-induced contamination , 2001, SPIE Advanced Lithography.

[9]  O'Keefe,et al.  Plasma Cleaning and Its Applications for Electron Microscopy , 1999, Microscopy and Microanalysis.