论文信息 - Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters

Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters

Microwave characterization on 1-µm gate (Al, Ga)As/GaAs modulation-doped field-effect transistors (MODFET's) was done using a network analyzer. Equivalent circuit parameters were computed and compared to those of GaAs MESFET's with an identical geometry. The MODFET's had higher current-gain and power-gain cutoff frequencies (18 and 38 GHz versus 14 and 30GHz) and the circuit parameters gmo, Cgs, and Rdsdisplayed sharper pinchoff effects than those of the MESFET's. Cgsin the MODFET displayed a gate bias dependence due to widening of the potential well in the channel. This information should prove valuable in the development of MODFET computer models for circuit simulation.

[1] P. Wolf,et al. Microwave properties of Schottky-barrier field-effect transistors , 1970 .

[2] Hermann A. Haus,et al. Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect-Transistors , 1975 .

[3] W. Fischer,et al. Equivalent circuit and gain of MOS field effect transistors , 1966 .

[4] L. Eastman,et al. Quarter-micron gate length microwave high electron mobility transistor , 1983 .

[5] E. Wasserstrom,et al. The potential due to a charged metallic strip on a semiconductor surface , 1970, Bell Syst. Tech. J..

[6] H. Morkoc,et al. Model for modulation doped field effect transistor , 1982, IEEE Electron Device Letters.

[7] C.P. Lee,et al. IIA-7 ultra high speed integrated circuits using GaAs/GaAlAs high electron mobility transistors , 1983, IEEE Transactions on Electron Devices.

[8] R.E. Williams,et al. Graded channel FET's: Improved linearity and noise figure , 1978, IEEE Transactions on Electron Devices.

[9] R.W.H. Engelmann,et al. Bias dependence of GaAs and InP MESFET parameters , 1977, IEEE Transactions on Electron Devices.

[10] T. Drummond,et al. Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructures , 1982 .