FEDRAM: A capacitor-less DRAM based on ferroelectric-gated field-effect transistor

A capacitor-less DRAM cell based on ferroelectric-gate memory transistor structure, FErroelectric-DRAM (FEDRAM), is introduced. Compared to the conventional DRAM cell, it offers much simpler cell structure, longer retention time, better scalability, and lower power consumption. Cell size of 4F2 can be realized. It is also most suitable for embedded applications. Recent developments of the HfO2-based ferroelectrics have overcome the shortcomings of PZT and SBT for FEDRAM technology, and make the commercialization of FEDRAM much closer to reality.