Sensitivity of Pt/ZnO schottky diode characteristics to hydrogen

Pt/ ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H 2 is introduced into a N 2 ambient at 25°C.The rectifying current-voltage(I-V) characteristic shows a non-reversible collapse to Ohmic behavior when as little as 50 ppm of H 2 is present in the N 2 ambient. At higher temperatures, the recovery is thermally activated with an activation energy of ∼0.25 eV. This suggests that introduction of hydrogen shallow donors into the ZnO is a contributor to the change in current of the diodes.

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