An improved computationally efficient drain current model for double-gate MOSFETs

A drain current model with improved computational efficiency for double-gate (DG) MOSFETs is presented in this paper. Based on our previously proposed potential model, the drain current model is obtained with the implementation of an improved calculation method and the computation efficiency is substantially enhanced. 2-D device simulation (TCAD) is extended to verify the proposed model. In addition, the model is implemented into HSPICE circuit simulator in Verilog-A to prepare for the practical application.

[1]  J. Jomaah,et al.  An explicit analytical charge-based model of undoped independent double gate MOSFET , 2006 .

[2]  S. Mahapatra,et al.  A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors , 2010, IEEE Transactions on Electron Devices.

[3]  F. Balestra,et al.  Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance , 1987, IEEE Electron Device Letters.

[4]  Yuan Taur,et al.  An analytic potential model for symmetric and asymmetric DG MOSFETs , 2006 .

[5]  Xing Zhang,et al.  Comparison and improvement of two core compact models for double-gate MOSFETs , 2010 .

[6]  Yue Fu,et al.  Generic Carrier-Based Core Model for Undoped Four-Terminal Double-Gate MOSFETs Valid for Symmetric, Asymmetric, and Independent-Gate-Operation Modes , 2008, IEEE Transactions on Electron Devices.

[7]  G. Gildenblat,et al.  Solution space for the independent-gate asymmetric DGFET , 2010 .

[9]  Xing Zhou,et al.  Rigorous Surface-Potential Solution for Undoped Symmetric Double-Gate MOSFETs Considering Both Electrons and Holes at Quasi NonEquilibrium , 2008, IEEE Transactions on Electron Devices.

[10]  Christian Enz,et al.  A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism , 2005 .

[11]  Y. Taur.  An analytical solution to a double-gate MOSFET with undoped body , 2000 .

[12]  Xing Zhou,et al.  Surface-Potential Solution for Generic Undoped MOSFETs With Two Gates , 2007, IEEE Transactions on Electron Devices.

[13]  J.J. Liou,et al.  A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs , 2007, IEEE Transactions on Electron Devices.

[14]  Adelmo Ortiz-Conde,et al.  Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current , 2006 .