Hot carrier-induced degradation in bulk FinFETs

Hot-carrier effects in n-channel bulk FinFETs were investigated for the first time. For V/sub DS/ larger than about 1.4 V, stress bias condition of V/sub GS/=V/sub DS/ showed shorter lifetime than that of V/sub GS/=V/sub DS//2 stress condition. The hot-carrier-induced degradation was checked by changing the fin body width, and increased with decreasing the width. Bulk FinFETs with (100) side surface orientation showed less g/sub mmax/ degradation than that of the device with [110] side surface. The supply voltage which meets 10 years lifetime at the stress bias condition of V/sub GS/=V/sub DS/ was 1.2 V.

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