论文信息 - Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature - 字舞流文

Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature

Eduard Hulicius | Maya Mikhailova | M. Mikhailova | K. Moiseev | Y. Yakovlev | J. Pangrác | Konstantin Moiseev | Eduard Ivanov | Vyacheslav Romanov | Yury Yakovlev | Alica Hospodková | Jiří Pangrác | Tomislav Šimeček | T. Šimeček | E. Hulicius | E. Ivanov | V. Romanov | Alica Hospodková

[1] M. Mikhailova,et al. Type II heterojunctions in the GaInAsSb/GaSb system , 1994 .

[2] Neil T. Gordon,et al. Negative luminescence from In1−xAlxSb and CdxHg1−xTe diodes , 1995 .

[3] R. M. Biefeld,et al. InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition , 1996 .

[4] G. Margaritondo. Interface states at semiconductor junctions , 1999 .

[5] M. Peter,et al. BAND GAPS AND BAND OFFSETS IN STRAINED GAAS1-YSBY ON INP GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION , 1999 .

[6] K. Aoki,et al. Oxygen Plasma Damage in GaAs Directly Exposed to Surface-Wave Plasma , 2002 .

[7] K. D. Moiseev,et al. Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions , 2004 .

[8] Pavel Hubík,et al. Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy , 2004 .

[9] R Wiesendanger,et al. Local electronic structure near Mn acceptors in InAs: surface-induced symmetry breaking and coupling to host states. , 2007, Physical review letters.

[10] M. Mikhailova,et al. Type II GaAsxSb1−x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution , 2008 .

[11] A. Hospodkova,et al. Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface , 2010 .