论文信息 - Applications of the electron beam exposure system

Applications of the electron beam exposure system

Successful application of high-speed scanning electron lithography machines such as the electron beam exposure system (EBES) requires the development of suitable materials and processes. We describe how electron resists with improved sensitivity have been used to make high-quality photolithographic master masks in which 1-µm lines and spaces are resolved and also to make MOS integrated circuits with improved packing density and performance.

R. C. Henderson | J. P. Ballantyne | R. Pease | L. Yau | A. Voshchenkov

[1] H. C. Poon,et al. DC Model for short-channel IGFET's , 1973 .

[2] H. J. Boll,et al. Design of a high-performance 1024-B switched capacitor p-channel IGFET memory chip , 1973 .

[3] M. Hatzakis,et al. Electron-Beam Fabrication of Ion Implanted High-Performance FET Circuits , 1973 .

[4] A. U. Macrae,et al. Tapered windows in SiO 2 by ion implantation , 1973 .

[5] R. C. Henderson,et al. IGFET Inverter Circuits made with Electron Lithography , 1973 .

[6] R. J. Strain,et al. Conductively connected charge-coupled device , 1974 .

[7] L. F. Thompson,et al. Lithography and radiation chemistry of epoxy containing negative electron resists , 1974 .

[8] T. T. Sheng,et al. Tungsten metallization for LSI applications , 1974 .

[9] Simple I/V model for short-channel i.g.f.e.t.s in the triode region , 1975 .

[10] J. W. Stafford,et al. EBES: A practical electron lithographic system , 1975, IEEE Transactions on Electron Devices.