Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si

A greatly enhanced lateral photovoltaic effect (LPE) is achieved in an improved metal-semiconductor (MS) structure of TiO2(1.2 nm)/Ti(6.2 nm)/Si. Compared with the LPE in traditional MS structures of Ti(6.2 nm)/Si and other reported MS structures, this oxide-metal-semiconductor structure presents a much larger sensitivity of lateral photovoltage of 97 mV/mm. We ascribe this to the enhancement of lateral gradient of the density of excess carriers in the structure caused by the increase of surface resistivity.

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