Formation of metallic in in InGaN/GaN multiquantum wells

InxGa1−xN∕GaN light-emitting diode structures with a high In concentration may lose all optical output after capping the active region with a p-type GaN layer. Transmission electron microscopy has been applied to determine the microstructural changes that occur in the quantum-well (QW) region during this capping process. The loss of the optical output is related to a clustering of In into metallic In platelets in the QW region. The properties of these In platelets are described and a formation model is proposed.

[1]  Colin J. Humphreys,et al.  Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope , 2003 .

[2]  O. Ambacher,et al.  Study of inversion domain pyramids formed during the GaN:Mg growth , 2003 .

[3]  I. Moerman,et al.  Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures , 2003 .

[4]  Akio Yamamoto,et al.  Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1) , 2002 .

[5]  Nikhil Sharma,et al.  Chemical mapping and formation of V-defects in InGaN multiple quantum wells , 2000 .

[6]  Oliver Ambacher,et al.  Growth and applications of Group III-nitrides , 1998 .

[7]  J. Stejskal,et al.  Thermodynamic aspects of the Ga1−xInxN growth by MOCVD , 1998 .

[8]  H. Angerer,et al.  Influence of magnesium doping on the structural properties of GaN layers , 1997 .

[9]  Alan Francis Wright,et al.  Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN , 1997 .

[10]  Shuji Nakamura,et al.  The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[11]  Oliver Ambacher,et al.  Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition , 1996 .

[12]  R. Street,et al.  Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition , 1996 .

[13]  Theodore D. Moustakas,et al.  Hydrogenation of p‐type gallium nitride , 1994 .

[14]  Ryoichi Ito,et al.  Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells , 1992 .

[15]  D. Gerthsen,et al.  Atomic Scale Strain and Composition Evaluation from High-Resolution Transmission Electron Microscopy Images , 1999 .