Carbon / high-k Trench Capacitor for the 40nm DRAM Generation

Carbon is proposed as a new FEOL material with high conductivity and thermal stability for CMOS integration. Here the application of carbon-based electrodes for future DRAM cell capacitors is presented. Trench capacitors with high-k dielectrics have been realized, fulfilling the requirements for serial resistance, capacitance, leakage, reliability and temperature stability beyond the 40 nm technology node.

[1]  J. McPherson,et al.  Trends in the ultimate breakdown strength of high dielectric-constant materials , 2003 .

[2]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[3]  G. Duesberg,et al.  Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600 °C and a Simple Growth Model , 2004 .

[4]  T. Schloesser,et al.  Challenges for the DRAM cell scaling to 40nm , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[5]  G. Duesberg,et al.  Carbon nanotubes for interconnect applications , 2002, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..