论文信息 - Emission and capture measurements on deep levels in InP

Emission and capture measurements on deep levels in InP

DLTS measurements have been made on a large number of InP samples. Eight different electron traps are observed in this material, and their emission characteristics are reported. For three of these levels, detailed capture cross section measurements were possible, leading to an accurate description of their thermodynamic properties.

P. Tapster

[1] P. J. Dean,et al. Deep levels in Co-doped InP , 1982 .

[2] H. Lim,et al. Deep level transient spectroscopy study in n‐type InP , 1982 .

[3] W. Jantsch,et al. Deep traps in GaAs under hydrostatic pressure , 1982 .

[4] P. J. Dean,et al. Optical and capacitance spectroscopy of InP:Fe , 1981 .

[5] D. Lang,et al. A study of deep level in bulk n‐InP by transient spectroscopy , 1981 .

[6] H. Okamoto,et al. Molecular‐beam epitaxial growth of InP homoepitaxial layers and their electrical and optical properties , 1981 .

[7] Y. Hamakawa,et al. Deep Impurity Levels in InP LEC Crystals , 1981 .

[8] D. Lang,et al. Complex nature of gold-related deep levels in silicon , 1980 .

[9] O. Wada,et al. Interaction of deep-level traps with the lowest and upper conduction minima in InP , 1980 .

[10] O. Engström,et al. Thermodynamical analysis of optimal recombination centers in thyristors , 1978 .

[11] A. J. Grant,et al. Deep traps in ideal n-InP Schottky diodes , 1978 .

[12] D. Lang,et al. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP , 1977 .

[13] S. Guha,et al. Effect of heat treatment on n-type bulk grown and vapour phase epitaxial indium phosphide , 1977 .

[14] D. Lang. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors , 1974 .

[15] M. Bleicher,et al. Schottky-barrier capacitance measurements for deep level impurity determination , 1973 .