Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires
暂无分享,去创建一个
Emanuel Tutuc | Yoshio Nishi | Mark C. Reuter | Hemanth Jagannathan | Supratik Guha | Rafael Peretti Pezzi | Matthew Copel | Y. Nishi | M. Reuter | H. Jagannathan | M. Copel | S. Guha | E. Tutuc | R. Pezzi
[1] R. A. Beckman,et al. Fabrication of conducting Si nanowire arrays , 2004, cond-mat/0403518.
[2] Zhiyong Fan,et al. Gate-refreshable nanowire chemical sensors , 2005 .
[3] A. Hiraki. Low temperature reactions at Si/metal interfaces; What is going on at the interfaces? , 1983 .
[4] Kelly P. Knutsen,et al. Single gallium nitride nanowire lasers , 2002, Nature materials.
[5] J. Mayer,et al. Formation of silicon oxide over gold layers on silicon substrates , 1972 .
[6] E. I. Givargizov. Fundamental aspects of VLS growth , 1975 .
[7] G. Lay,et al. Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status report , 1983 .
[8] G. Ottaviani,et al. Outdiffusion of Si through gold films: The effects of Si orientation, gold deposition techniques and rates, and annealing ambients , 1984 .
[9] K. A. Jackson,et al. Study of the Filamentary Growth of Silicon Crystals from the Vapor , 1964 .
[10] Xiangfeng Duan,et al. General Synthesis of Compound Semiconductor Nanowires , 2000 .
[11] A. Majumdar,et al. Fabrication and characterization of a nanowire/polymer-based nanocomposite for a prototype thermoelectric device , 2004, Journal of Microelectromechanical Systems.