Advanced Model and RF-CMOS Design of the Boot-Strapped Inductor

This paper reports a new advanced design of the active circuit named boot-strapped inductor (BSI), which realizes an equivalent inductor with an high quality factor (Q). In particular, a new small-signal circuit model is proposed for an accurate design at high frequency in a modern RF CMOS process, also by taking into account the issues of an algorithmic and low-power consumption circuit design. A case study for 13-GHz low-power applications by using a standard for 90 nm CMOS process is reported. The BSI provides an equivalent inductance close to 1.6 nH with an associated quality factor Q close to 200.

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