Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids
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Yue Peng | Yue Hao | Chunfu Zhang | Jiuren Zhou | Genquan Han | Qing-Qing Sun | Xiaoli Lu | David Wei Zhang | Jincheng Zhang | David-Wei Zhang | Qingqing Sun | Y. Hao | G. Han | Chunfu Zhang | Jincheng Zhang | Jiuren Zhou | Qinglong Li | Qinglong Li | Yue Peng | Xiaoli Lu
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