论文信息 - Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids

Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids

We report the first ferroelectric (FE) HfZrOx (HZO) Ge and GeSn pMOSFETs with sub-60 mV/decade subthreshold swing (SS) (40∼43 mV/decade), negligible hysteresis, and enhanced Ids. With a RTA at 450 oC, FE devices with reduced hysteresis of 40∼60 mV demonstrate the significantly improved SS and Ids characteristics compared to control devices without FE, owing to the negative capacitance (NC) effect induced by HZO. FE Ge and GeSn pFETs achieve 22% and 20% Ids enhancement than control devices, respectively, at the drive voltage of 1.0 V. NC effect in FE devices is proved by the gate leakage and inversion capacitance characteristics.

[1] M. H. Lee,et al. Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics , 2015, IEEE Electron Device Letters.

[2] Y. Taur,et al. Modeling and Design of Ferroelectric MOSFETs , 2011, IEEE Transactions on Electron Devices.

[3] Asif Islam Khan,et al. Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor , 2016, IEEE Electron Device Letters.

[4] C. Shin,et al. Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching , 2016, IEEE Electron Device Letters.

[5] S. Datta,et al. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. , 2008, Nano letters.

[6] Albert Chin,et al. Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High- $\kappa$ Gate Dielectric , 2014, IEEE Electron Device Letters.

[7] Asif Islam Khan,et al. Single crystal functional oxides on silicon , 2015, Nature Communications.