Influence of TiO 2 incorporation in HfO 2 and Al 2O 3 based capacitor dielectrics

[1]  J. Schulze,et al.  Conformal aluminum oxide coating of high aspect ratio structures using metalorganic chemical vapor deposition , 2006 .

[2]  J. Robertson High dielectric constant gate oxides for metal oxide Si transistors , 2006 .

[3]  P. Evans,et al.  Atomic layer deposition of TiO2 and Al2O3 thin films and nanolaminates , 2006 .

[4]  M. Raymond,et al.  Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition , 2005 .

[5]  Rainer Duschl,et al.  Localization and physical analysis of dielectric weaknesses for state-of-the-art deep trench based DRAM products , 2005, Microelectron. Reliab..

[6]  K. Kukli,et al.  Atomic Layer Deposition and Characterization of HfO2 Films on Noble Metal Film Substrates , 2005 .

[7]  J. Roh,et al.  Electrical Properties in High-k HfO2 Capacitors with an Equivalent Oxide Thickness of 9 Å on Ru Metal Electrode , 2005 .

[8]  Y. S. Kim,et al.  Nanolaminated Al2O3–TiO2 thin films grown by atomic layer deposition , 2005 .

[9]  Mikko Ritala,et al.  Atomic Layer Deposition of Photocatalytic TiO2 Thin Films from Titanium Tetramethoxide and Water , 2004 .

[10]  D.S.H. Chan,et al.  RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications , 2004, IEEE Transactions on Electron Devices.

[11]  S. Campbell,et al.  A study of mixtures of HfO 2 and TiO 2 as high- k gate dielectrics , 2004 .

[12]  K. Honda,et al.  Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO2–TiO2 Composite Films , 2004 .

[13]  H. Waard,et al.  Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function , 2004 .

[14]  Mikko Ritala,et al.  Atomic layer deposition chemistry: recent developments and future challenges. , 2003, Angewandte Chemie.

[15]  Rolf-Peter Vollertsen,et al.  Thin dielectric reliability assessment for DRAM technology with deep trench storage node , 2003, Microelectron. Reliab..

[16]  J. Winkler,et al.  MIM capacitors using atomic-layer-deposited high-/spl kappa/ (HfO/sub 2/)/sub 1-x/(Al/sub 2/O/sub 3/)/sub x/ dielectrics , 2003, IEEE Electron Device Letters.

[17]  M. Ritala,et al.  Ruthenium Thin Films Grown by Atomic Layer Deposition , 2003 .

[18]  M. Ritala,et al.  Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water , 2000 .

[19]  Jaan Aarik,et al.  Thickness profiles of thin films caused by secondary reactions in flow-type atomic layer deposition reactors , 1997 .

[20]  K. Kukli,et al.  Properties of Ta2 O 5‐Based Dielectric Nanolaminates Deposited by Atomic Layer Epitaxy , 1997 .