论文信息 - Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC - 字舞流文

Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC

A. Henry | E. Janzén | J. Isoya | N. Morishita | H. Pedersen | C. Hemmingsson | F. C. Beyer | T. Ohshima | E. Janzén