An optimized RESURF LDMOS power device module compatible with advanced logic processes

An advanced optimized RESURF LDMOS device intended for use in low side applications and suitable for integration into advanced CMOS and BiCMOS processes is described. Devices with 84 V and 97 V breakdown voltages have been modeled and fabricated with excellent specific on-resistance performance at CMOS level gate drives. Specific on-resistance of 2.0 m Omega .cm/sup 2/ at 97 V represents the best performance in this voltage class.<<ETX>>

[1]  Oh-Kyong Kwon,et al.  Optimized 60-V Lateral Dmos Devices for Vlsi Power Applications , 1991, 1991 Symposium on VLSI Technology.

[2]  K. Shenai,et al.  Charge controlled 80 volt lateral DMOSFET with very low specific on-resistance designed for an integrated power process , 1990, International Technical Digest on Electron Devices.

[3]  J. Appels,et al.  High voltage thin layer devices (RESURF devices) , 1979, 1979 International Electron Devices Meeting.

[4]  Masakatsu Hoshi,et al.  Low on-resistance power LDMOSFET using double metal process technology , 1991, [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs.

[5]  C.A.T. Salama,et al.  Optimization of RESURF LDMOS transistors: an analytical approach , 1990 .