Integrated enhancement/depletion‐mode GaN MIS‐HEMTs for high‐speed mixed‐signal applications

Monolithically integrated enhancement/depletion (E/D)-mode AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) are being developed for high-speed mixed-signal applications. Partially recessed gate combined with buffered gate insulator produce remarkably improved trade-off between the threshold voltage (1.4 V) and current density (848 mA mm−1) in the E-mode device. Record peak transconductances of 311 and 248 mA mm−1 are obtained for D- and E-mode MIS-HEMTs, respectively. A direct-coupled FET logic (DCFL) 51-stage ring oscillator implemented using the MIS-HEMT technique is fabricated, which exhibits high-speed performance with an oscillation frequency of 908 MHz and a high output voltage swing of 1.48 V.

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