Analytical and Experimental Study on Sensitivity of Planar Piezoresistive Vibration Sensor

We are engaged in developing a planar high-sensitivity piezoresistive vibration sensor with lower process cost and fewer package difficulties. For the pursuit of high sensitivity, the design and optimization of the sensor structure are studied together via a theoretical principle approach and finite-element method (FEM) analysis. The effects of the vibration sensor dimensions, including the solid width and length of flexure, the structure thickness, and the piezoresistor width, have been analyzed comprehensively. Design guidelines are presented for the fabrication of vibration sensors, and the sensitive position of the piezoresistor on a flexure beam is obtained for resolution optimization. To calculate the relative resistance changes in one-beam flexure, the theoretical approach and the FEM simulation are used. The results of the two methods agree well, the relative error being only 3.8%. Moreover, dynamic measurement of the structure of the prototype vibration sensor is implemented. The calculated and measured results of the relative displacement between the proof mass and substrate are in good agreement, which also demonstrated the FEM-based design to be reasonable.

[1]  B. J. Kane,et al.  A traction stress sensor array for use in high-resolution robotic tactile imaging , 2000, Journal of Microelectromechanical Systems.

[2]  Batch derivation of piezoresistive coefficient tensor by matrix algebra , 2004 .

[3]  Jian Dong,et al.  Silicon micromachined high-shock accelerometers with a curved-surface-application structure for over-range stop protection and free-mode-resonance depression , 2002 .

[4]  Yuebin Ning,et al.  Fabrication and characterization of high g-force, silicon piezoresistive accelerometers , 1995 .

[5]  James H. Smith,et al.  Micromachined pressure sensors: review and recent developments , 1997 .

[6]  O. N. Tufte,et al.  Piezoresistive Properties of Silicon Diffused Layers , 1963 .

[7]  J. Wortman,et al.  Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and Germanium , 1965 .

[8]  Susumu Sugiyama,et al.  Integrated piezoresistive pressure sensor with both voltage and frequency output , 1983 .

[9]  T. Kenny,et al.  A high-performance planar piezoresistive accelerometer , 2000, Journal of Microelectromechanical Systems.

[10]  O. N. Tufte,et al.  Piezoresistive Properties of Heavily Dopedn-Type Silicon , 1964 .

[11]  Charles S. Smith Piezoresistance Effect in Germanium and Silicon , 1954 .

[12]  Peter K. Liaw,et al.  Tensile, fracture toughness and fatigue crack growth rate properties of silicon carbide whisker and particulate reinforced aluminum metal matrix composites , 1986 .

[13]  Yan Wang,et al.  Analysis and design of a four-terminal silicon pressure sensor at the centre of a diaphragm , 1987 .

[14]  L.M. Roylance,et al.  A batch-fabricated silicon accelerometer , 1979, IEEE Transactions on Electron Devices.

[15]  Jerome P. Lynch,et al.  Design of Piezoresistive MEMS-Based Accelerometer for Integration with Wireless Sensing Unit for Structural Monitoring , 2003 .

[16]  A. G. Milnes,et al.  Piezoresistance of Diffused Layers in Cubic Semiconductors , 1963 .

[17]  Yozo Kanda,et al.  Piezoresistance effect of silicon , 1991 .

[18]  Yan Wang,et al.  Geometric design rules of four-terminal gauge for pressure sensors , 1989 .

[19]  Yozo Kanda,et al.  Nonlinearity of piezoresistance effect in p- and n-Type silicon , 1990 .

[20]  Colin P. Ratcliffe,et al.  Investigation into the use of low cost MEMS accelerometers for vibration based damage detection , 2008 .

[21]  M. Gretillat,et al.  Improved design of a silicon micromachined gyroscope with piezoresistive detection and electromagnetic excitation , 1999 .

[22]  Minhang Bao,et al.  Over-range capacity of a piezoresistive microaccelerometer , 1997 .

[23]  Daniele Marioli,et al.  Low-cost accelerometers: Two examples in thick-film technology , 1996 .