High power‐handling SPDT switch in 0.25‐µm GaN technology

An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contribution. The design procedure and the comparison between simulations and measurements of a test circuit are provided. The switch handles an input power of 48.8 dBm at 0.1 dB power compression level and features a 31‐dB isolation together with an insertion loss less than 0.5 dB both in Rx‐ and Tx‐mode.

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