X-ray emission spectroscopic studies of silicon precipitation in surface layer of SiO2 induced by argon excimer laser irradiation

Abstract The ultra-soft X-ray emission spectra were taken from surfaces of bulk silica glass and silica glass films exposed to an argon excimer laser ( λ =126 nm) and compared with the spectra taken from the virgin surfaces. The precipitation of crystalline silicon is found to take place in thin surface layers of the irradiated bulk silica glass and 15 nm film. An estimation of concentration of crystalline silicon precipitation with the depth is given on the basis of the measurements of Si L 2,3 X-ray emission spectra obtained at different accelerating voltages of the electron beam on the X-ray tube. Based upon the precipitation conditions for these samples, we discuss the crystalline silicon precipitation mechanism: the electronic excitation induces the bond-breaking between Si and O atoms, although there is a critical density of photons for the bond-breaking and temperature rise enhances the crystalline silicon precipitation.