Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature
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[1] M. Berti,et al. Dose rate effects on the dynamic annealing mechanism in P+ -implanted silicon , 1986 .
[2] P. Enders. Interface Recombination Velocity for a Barrier at the p-n-Heterojunction , 1986 .
[3] M. Berti,et al. On the Dynamic Annealing Mechanism in P+‐Implanted Silicon , 1986 .
[4] J. Linnros,et al. Channeling dependence of ion‐beam‐induced epitaxial recrystallization in silicon , 1986 .
[5] Williams,et al. Dominant influence of beam-induced interface rearrangement on solid-phase epitaxial crystallization of amorphous silicon. , 1985, Physical review letters.
[6] R. Elliman,et al. Ion beam induced epitaxial crystallisation of silicon , 1985 .
[7] J. Linnros,et al. Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire , 1984 .
[8] F. Zignani,et al. Self‐annealing of ion‐implanted silicon: First experimental results , 1981 .
[9] L. Csepregi,et al. Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions , 1977 .
[10] T. Yamazaki,et al. Angular Distributions of (α, n) Reaction son Be and C , 1963 .