Role of Simulation Technology for the Progress in Power Devices and Their Applications

The modern power electronics era started with the commercialization of the silicon-controlled rectifier in 1957, since when power electronics systems have been installed in a wide range of applications from appliances to traction and utility systems as the technology has advanced. Meanwhile, simulation tools have played an important role in the research and development of power semiconductors and power electronics systems. As power devices and power electronics become increasingly important technologies in today's electric society, it is worth examining the overall integration of power electronics design. This paper reviews the history of simulation technology with reference to power device modeling and discusses the future of power electronics system design.

[1]  I. Omura,et al.  4.5 kV GTO turn-off failure analysis under an inductive load including snubber, gate circuit and various parasitics , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[2]  J. Yamashita,et al.  A study on the short circuit destruction of IGBTs , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[3]  B. Hull,et al.  High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime , 2006 .

[4]  Mamoru Kurata.  One-dimensional calculation of thyristor forward voltages and holding currents , 1976 .

[5]  C. S. Mitter,et al.  Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE , 1991, Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting.

[6]  H. Benda,et al.  Reverse recovery processes in silicon power rectifiers , 1967 .

[7]  Masanori Tsukuda,et al.  Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II , 2014, Microelectron. Reliab..

[8]  H. R. Zeller,et al.  Cosmic ray induced breakdown in high voltage semiconductor devices, microscopic model and phenomenological lifetime prediction , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

[9]  A. Hefner,et al.  Performance trade-off for the Insulated Gate Bipolar Transistor: Buffer layer versus base lifetime reduction , 1987, 1986 17th Annual IEEE Power Electronics Specialists Conference.

[10]  Wolfgang Fichtner,et al.  Static and dynamic characteristics of high voltage ( 3.5 kV ) IGBT and MCT devices , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[11]  Seiji Imai,et al.  Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation , 2003 .

[12]  Ho-Young Cha,et al.  Impact Ionization Coefficients in 4H-SiC , 2008, IEEE Transactions on Electron Devices.

[13]  H. Maeta,et al.  Transport of heavily boron-doped synthetic semiconductor diamond in the hopping regime , 2000 .

[14]  Ichiro Omura,et al.  Carrier injection enhancement effect of high voltage MOS devices-device physics and design concept , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

[15]  K. Takao,et al.  Study on advanced power device performance under real circuit conditions with an exact power loss simulator , 2007, 2007 European Conference on Power Electronics and Applications.

[16]  Ichiro Omura,et al.  A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor , 1993, Proceedings of IEEE International Electron Devices Meeting.

[17]  S. Yamasaki,et al.  High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers , 2009 .

[18]  K. Takao,et al.  Equivalent circuit model for GaN-HEMTs in a switching simulation , 2008, INTELEC 2008 - 2008 IEEE 30th International Telecommunications Energy Conference.

[19]  Ichiro Omura,et al.  Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part I , 2011, Microelectron. Reliab..

[20]  U Feldmann,et al.  HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits , 2010, IEEE Transactions on Electron Devices.

[21]  J. Palmour,et al.  Steady-state and transient characteristics of 10 kV 4H-SiC diodes , 2004 .

[22]  U. Drofenik,et al.  Towards virtual prototyping and comprehensive multi-objective optimisation in power electronics , 2010 .

[23]  A. Hefner,et al.  The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT) , 1986, IEEE Transactions on Nuclear Science.

[24]  W. Anheier,et al.  Rigorous numerical analysis of a planar thyristor , 1975, 1975 International Electron Devices Meeting.

[25]  S. Yamasaki,et al.  Diamond Schottky-pn diode with high forward current density and fast switching operation , 2009 .

[27]  G. Wachutka,et al.  Physically based simulation of strong charge multiplication events in power devices triggered by incident ions , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[28]  H. Alan Mantooth,et al.  Physics-based modeling and characterization for silicon carbide power diodes , 2006 .

[29]  G. Wachutka,et al.  Cosmic radiation-induced failure mechanism of high voltage IGBT , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

[30]  H. Ohashi.  Power electronics innovation with next generation advanced power devices , 2003, The 25th International Telecommunications Energy Conference, 2003. INTELEC '03..

[31]  U. Feldmann,et al.  Temperature dependence of switching performance in IGBT circuits and its compact modeling , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[32]  V. Temple,et al.  Limitations on injection efficiency in power devices , 1976, 1975 International Electron Devices Meeting.

[33]  Wolfgang Fichtner,et al.  A comparison of the switching behavior of IGBT and MCT power devices , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[34]  M.S. Adler,et al.  Theory and breakdown voltage for planar devices with a single field limiting ring , 1977, IEEE Transactions on Electron Devices.

[35]  Mitiko Miura-Mattausch,et al.  Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices , 2011, IEEE Transactions on Electron Devices.

[36]  W. B. Wilson.  Evidence for Hopping Transport in Boron-Doped Diamond , 1962 .

[37]  M. Kurata,et al.  Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO , 1984, 1984 International Electron Devices Meeting.

[38]  M. Bakowski,et al.  The two basic failure modes in the GTO-modelling and experiment , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

[39]  D. J. Coe,et al.  Numerical analysis of multiple field limiting ring systems , 1984 .

[40]  Frank Pfirsch,et al.  Cosmic radiation as a cause for power device failure and possible countermeasures , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

[41]  John B. Shoven,et al.  I , Edinburgh Medical and Surgical Journal.

[42]  M. Kurata,et al.  Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics , 1985, 1985 International Electron Devices Meeting.

[43]  Hideo Matsuda,et al.  Analysis of GTO failure mode during DC voltage blocking , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.

[44]  M.S. Adler,et al.  Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctions , 1975, IEEE Transactions on Electron Devices.