Degradation behavior and damage mechanisms of CCD image sensor with deep-UV laser radiation

As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial applications is shifting to intense DUV radiation sources. This trend necessitates the development of DUV sensitive charge-coupled device (CCD) cameras to provide imaging capability for process control and inspection purposes. In this paper, we examine the effects of DUV laser radiation on CCD image sensor characteristics and the mechanisms responsible for DUV laser damage in CCDs. When samples of thinned front-illuminated linescan CCD sensors are exposed to F/sub 2/(/spl lambda/=157 nm) excimer laser radiation, fluctuation in the extrinsic quantum efficiency (QE) and a substantial upsurge in the dark current density are observed as a function of exposure dose. The visible QE, dark current, and charge conversion efficiency (CCE) are also permanently altered by the DUV irradiation. These instabilities can be attributed to a variety of UV-induced effects that modify the optical and electrical properties of the SiO/sub 2/ layer and Si-SiO/sub 2/ interface, resulting in temporary and permanent shifts in CCD performance. Optimization of the overlying oxide thickness and the Si-SiO/sub 2/ interface quality are necessary in order to realize CCD sensors with the desired performance, radiation tolerance and stability at DUV wavelengths.

[1]  D. Elliott,et al.  Ultraviolet laser technology and applications , 1995 .

[2]  Hideo Hosono,et al.  Two‐photon processes in defect formation by excimer lasers in synthetic silica glass , 1988 .

[3]  Richard Williams.  Photoemission of electrons from silicon into silicon dioxide , 1965 .

[4]  Gérard Barbottin,et al.  Instabilities in silicon devices : silicon passivation and related instabilities , 1986 .

[5]  T. P. Ma,et al.  Ionizing radiation effects in MOS devices and circuits , 1989 .

[6]  W. K. Choi,et al.  Controllable laser‐induced periodic structures at silicon–dioxide/silicon interface by excimer laser irradiation , 1996 .

[7]  H. Hosono,et al.  Photochemical processes induced by 157-nm light in H(2)-impregnated glassy SiO(2):OH. , 1999, Optics letters.

[8]  H. Hosono,et al.  Physical disorder and optical properties in the vacuum ultraviolet region of amorphous SiO(2). , 2001, Physical review letters.

[9]  Raymond Hayes,et al.  Ultraviolet And Extreme Ultraviolet Response Of Charge-Coupled-Device Detectors , 1987 .

[10]  W. W. Duley,et al.  UV Lasers: Effects and Applications in Materials Science , 1996 .

[11]  Arai,et al.  Dependence of defects induced by excimer laser on intrinsic structural defects in synthetic silica glasses. , 1991, Physical review. B, Condensed matter.

[12]  C. Song,et al.  Oxygen Plasma Effects on Performance of Pentacene Thin Film Transistor , 2003 .

[13]  John R. Tower,et al.  Deep-UV-sensitive high-frame-rate backside-illuminated CCD camera developments , 2002, IS&T/SPIE Electronic Imaging.

[14]  Hideo Hosono,et al.  Power dependence of defect formation in SiO2 glass by F2 laser irradiation , 2002 .

[15]  A. Theuwissen,et al.  Solid-State Imaging with Charge-Coupled Devices , 1995 .

[16]  R. Korde,et al.  Stability and quantum efficiency performance of silicon photodiode detectors in the far ultraviolet. , 1989, Applied optics.

[17]  R. Devine,et al.  Photoinduced fixed oxide charge modification in SiO2 films , 1985 .

[18]  R. Devine,et al.  Photon-induced oxygen loss in thin SiO/sub 2/ films , 1984 .

[19]  Linards Skuja,et al.  Formation and decay of nonbridging oxygen hole centers in SiO2 glasses induced by F2 laser irradiation: In situ observation using a pump and probe technique , 2001 .

[20]  J. Janesick,et al.  Scientific Charge-Coupled Devices , 2001 .

[21]  Masahiro Hirano,et al.  Damage behavior of SiO2 glass induced by 193-nm radiation under a simulated operating mode of lithography laser , 2001, SPIE Laser Damage.