论文信息 - Single event effect: Simulations and analysis on 3N163 PMOS transistor

Single event effect: Simulations and analysis on 3N163 PMOS transistor

This work addresses the simulation of a commercial p-channel MOSFET (3N163) using Sentaurus TCAD tool to observe the behavior of this device operating under heavy-ion environment, in order to study Single Event Effect (SEE) mechanisms and its effects. The simulated results were used to understand experimental data collected on field and make a comparison between real and simulated data. It also allowed interpretation of experimental data, as well as elimination of spurious noises and artifacts, which are not related to SEE effects, but are imposed by environment and experimental facilities.

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