论文信息 - Dynamic safe-area protection for power transistors employs peak-temperature limiting

Dynamic safe-area protection for power transistors employs peak-temperature limiting

A protection system has been developed for power transistors that allows use of their full capabilities as manufactured, rather than those established by a hypothetical safe-area curve. As a result, higher power ratings can be guaranteed with a given die size. At the same time, reliability is improved by controlling peak temperature and by permitting individual devices to be 100% tested for rated power.

R. J. Widlar | M. Yamatake | R. Widlar | M. Yamatake

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