Broadband Light Source Based on Four-Color Self-Assembled InAs Quantum Dot Ensembles Monolithically Grown in Selective Areas

[1]  K. Asakawa,et al.  Area-selective and Site-controlled InAs Quantum-dot Growth Techniques for Photonic Crystal-based Ultra-small Integrated Circuit , 2008 .

[2]  Peter Ingo Borel,et al.  Photonic crystal and quantum dot technologies for all-optical switch and logic device , 2006 .

[3]  K. Asakawa,et al.  Monolithic Fabrication of Two-Color InAs Quantum Dots for Integrated Optical Devices by Using a Rotational Metal Mask , 2009 .

[4]  Richard A. Hogg,et al.  Self-assembled quantum-dot superluminescent light-emitting diodes , 2010 .

[5]  S. Denbaars,et al.  Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces , 1993 .

[6]  Lorenzo Occhi,et al.  Quantum Dot Superluminescent Diodes , 2008 .

[7]  Yoshimasa Sugimoto,et al.  Selective area growth of InAs quantum dots with a metal mask towards optical integrated circuit devices , 2007 .

[8]  K. Asakawa,et al.  Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light source , 2011 .

[9]  K. Nishi,et al.  A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates , 1999 .

[10]  Wei Zhou,et al.  Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum , 1999 .

[11]  Nadya Anscombe.  Join up the quantum dots , 2007 .

[12]  Yuriy Makhlin,et al.  Decoherence from ensembles of two-level fluctuators , 2006 .

[13]  Jannick P Rolland,et al.  Estimation of longitudinal resolution in optical coherence imaging. , 2002, Applied optics.