Universal damage factor for radiation-induced dark current in silicon devices

A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K/sub dark/, is the number of carriers thermally generated per unit volume per unit time in a depletion region per unit nonionizing dose deposited in that volume. K/sub dark/ appears to account successfully for the mean radiation-induced dark current for any silicon device in which thermal generation at bulk centers dominates. This dark-current damage factor applies for devices in all radiation environments except those that produce relatively isolated defects. Evidence is presented which strongly indicates that the defects responsible for dark current increases are not associated with impurities.

[1]  P. Marshall,et al.  Proton effects in charge-coupled devices , 1996 .

[2]  K. Gill,et al.  Bulk damage effects in irradiated silicon detectors due to clustered divacancies , 1997 .

[3]  Cheryl J. Dale,et al.  Proton-induced displacement damage distributions and extremes in silicon microvolumes charge injection device , 1990 .

[4]  Effects of Single Neutron Interactions in Silicon Integrated Circuits , 1985, IEEE Transactions on Nuclear Science.

[5]  M. S. Robbins,et al.  High-energy proton-induced dark signal in silicon charge coupled devices , 2000 .

[6]  O. Curtis.  Effects of Point Defects on Electrical and Optical Properties of Semiconductors , 1975 .

[7]  Charged particle radiation effects on bulk silicon and SIMOX SOI photodiodes , 1995 .

[8]  J.P. Spratt,et al.  The effects of nuclear radiation on P-channel CCD imagers , 1997, 1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference.

[9]  D. Bisello,et al.  Radiation tolerance of single-sided silicon microstrips , 1994 .

[10]  Edward A. Burke,et al.  Energy Dependence of Proton-Induced Displacement Damage in Silicon , 1986, IEEE Transactions on Nuclear Science.

[11]  Y. Ikeda,et al.  Radiation damage factor for ion-implanted silicon detectors irradiated with heavy ions , 1995 .

[12]  Tests of the radiation hardness of VLSI integrated circuits and silicon strip detectors for the SSC under neutron, proton, and gamma irradiation , 1990 .

[13]  N. Croitoru,et al.  Radiation hardness of silicon detectors for future colliders , 1993 .

[14]  C. Sah,et al.  Characteristics of 1.0 MeV electron-irradiated surface-controlled silicon junction diodes , 1973 .

[15]  Eckhart Fretwurst,et al.  Radiation hardness of silicon detectors — a challenge from high-energy physics , 1999 .

[16]  O. Curtis.  Effects of Oxygen and Dopant on Lifetime in Neutron-Irradiated Silicon , 1966 .

[17]  H. E. Kern,et al.  Noise from Neutron Induced Defects in Junction Field Effect Transistors , 1970 .

[18]  Geoffrey P. Summers,et al.  Displacement damage analogs to ionizing radiation effects , 1995 .

[19]  Comparison of surface and bulk effects of nuclear reactor radiation on planar devices , 1968 .

[20]  G. R. Hopkinson,et al.  Cobalt60 and proton radiation effects on large format, 2-D, CCD arrays for an Earth imaging application , 1992 .

[21]  K. Knöpfle,et al.  Pion and proton induced radiation damage to silicon detectors , 1996 .

[22]  Eckhart Fretwurst,et al.  Leakage current of hadron irradiated silicon detectors - material dependence , 1999 .

[23]  B. L. Gregory,et al.  Application of Neutron Damage Models to Semiconductor Device Studies , 1970 .

[24]  P. Mangiagalli,et al.  A comparative study of induced damage after irradiation with swift heavy ions, neutrons and electrons in low doped silicon , 1998 .

[25]  Cheryl J. Dale,et al.  Displacement damage equivalent to dose in silicon devices , 1989 .

[26]  G. Martinez,et al.  Energy dependence of damage to Si PIN diodes exposed to β radiation , 1997 .

[27]  R. A. Hartmann,et al.  Neutron Damage Mechanisms in Charge Transfer Devices , 1978, IEEE Transactions on Nuclear Science.

[28]  S. Watts,et al.  A new model for generation-recombination in silicon depletion regions after neutron irradiation , 1996 .

[29]  Dieter K. Schroder,et al.  Carrier lifetimes in silicon , 1997 .

[30]  R. A. Hartmann,et al.  Permanent Damage Produced by Single Proton Interactions in Silicon Devices , 1986, IEEE Transactions on Nuclear Science.

[31]  S. Messenger,et al.  Nonionizing energy loss (NIEL) for heavy ions , 1999 .

[32]  Robert J. Walters,et al.  Proton displacement damage and ionizing dose for shielded devices in space , 1997 .

[33]  H. Kraner,et al.  Fast neutron damage in silicon detectors , 1988 .

[34]  Frank Larin,et al.  Radiation effects in semiconductor devices , 1968 .

[35]  N. Tamura,et al.  Electron and neutron radiation damage effects on a two-phase CCD , 2000 .

[36]  Robert J. Walters,et al.  Damage correlations in semiconductors exposed to gamma, electron and proton radiations , 1993 .

[37]  F. D. Auret,et al.  The influence of high-energy alpha-particle irradiation on the spectral and defect properties of a Si photovoltaic detector , 1999 .

[38]  Arie Ruzin,et al.  Comparison of radiation damage in silicon induced by proton and neutron irradiation , 1999 .

[39]  D. Schroder,et al.  The concept of generation and recombination lifetimes in semiconductors , 1982, IEEE Transactions on Electron Devices.

[40]  E. Borchi,et al.  Non-ionising energy loss of pions in thin silicon samples , 1997 .

[41]  P. Marshall,et al.  The generation lifetime damage factor and its variance in silicon , 1989 .

[42]  P. W. Marshall,et al.  Correlation of Particle-Induced Displacement Damage in Silicon , 1987, IEEE Transactions on Nuclear Science.

[43]  Cheryl J. Dale,et al.  Displacement damage extremes in silicon depletion regions , 1989 .

[44]  J. R. Srour,et al.  Transient and Permanent Effects of Neutron Bombardment on a Commercially Available N-Buried-Channel CCD , 1980, IEEE Transactions on Nuclear Science.

[45]  P. Johnston,et al.  Effects of energy deposition by nuclear scattering in silicon p-i-n diode detectors , 1998 .

[46]  R. A. Hartmann,et al.  Radiation Damage Coefficients for Silicon Depletion Regions , 1979, IEEE Transactions on Nuclear Science.

[47]  Lifetime in Neutron Irradiated Silicon - Application to Devices , 1970 .

[48]  Cheryl J. Dale,et al.  Particle-induced spatial dark current fluctuations in focal plane arrays , 1990 .