论文信息 - Nd:LiNbO/sub 3/ microchip laser with 20 GHz subcarrier

Nd:LiNbO/sub 3/ microchip laser with 20 GHz subcarrier

This paper reports on the development of a 20 GHz mode-locked Nd:LiNbO/sub 3/ microchip laser operating at 1.084 /spl mu/m with an output power greater than 35 mW (CW). With this configuration, a single device simultaneously generates the optical carrier and the microwave subcarrier. A modulation index of 96% was obtained for a driving microwave power of 12.6 dBm at 20 GHz. An information signal up to 8 GHz was also superimposed on the 20 GHz subcarrier using an external modulator.

A.J.C. Vieira | P.R. Herczfeld | V.M. Contarino

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