Al1.3Sb3Te material for phase change memory application

Comparing with Ge2Sb2Te5, Al1.3Sb3Te is proved to be a promising candidate for phase-change memory use because of its higher crystallization temperature (∼210 °C), larger crystallization activation energy (3.32 eV), and better data retention ability (124 °C for 10 yr). Furthermore, Al1.3Sb3Te shows fast phase change speed and crystallizes into a uniformly embedded crystal structure. As short as 10 ns width, voltage pulse can realize reversible operations for Al1.3Sb3Te based phase-change memory cell. Moreover, phase-change memory cell based on Al1.3Sb3Te material also has good endurance (∼2.5 × 104 cycles) and an enough resistance ratio of ∼102.

[1]  Bo Liu,et al.  Si–Sb–Te materials for phase change memory applications , 2011, Nanotechnology.

[2]  Bomy Chen,et al.  Phase change memory cell using tungsten trioxide bottom heating layer , 2008 .

[3]  V. Weidenhof,et al.  Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements , 2000 .

[4]  T. Chin,et al.  Characteristics of Ga–Sb–Te Films for Phase-Change Memory , 2007, IEEE Transactions on Magnetics.

[5]  M. Kund,et al.  Nanosecond switching in GeTe phase change memory cells , 2009 .

[6]  Min-Gon Kim,et al.  Ge nitride formation in N-doped amorphous Ge2Sb2Te5 , 2007 .

[7]  S. Raoux,et al.  The crystallization behavior of stoichiometric and off-stoichiometric Ga-Sb-Te materials for phase-change memory , 2011 .

[8]  Crystallization behavior of amorphous Alx(Ge2Sb2Te5)1−x thin films , 2010 .

[9]  H.-S. Philip Wong,et al.  Phase Change Memory , 2010, Proceedings of the IEEE.

[10]  M. Lankhorst,et al.  Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.

[11]  Ming-Jinn Tsai,et al.  Ga2Te3Sb5—A Candidate for Fast and Ultralong Retention Phase‐Change Memory , 2009 .

[12]  Songlin Feng,et al.  Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application , 2011 .

[13]  Greg Atwood,et al.  Phase-Change Materials for Electronic Memories , 2008, Science.

[14]  H. E. Kissinger.  Reaction Kinetics in Differential Thermal Analysis , 1957 .