In this letter, we report the MBE growth of GRIN-SCH ALGaAs single quantum well lasers. In order to obtain high quality laser materials, superlattice among GaAs buffer and n-AlGaAs cladding layer was incorporated. Reduced Be dopant concentration in the p-AlGaAs cladding layer near the GRIN region was adopted, which is believed to be benefit to the control of p-n junction places and reduction of the oxygen incorporation. High power broad-area lasers were fabricated. The typical threshold current density is 300A/cm2 and the minimum threshold current density is 220A/cm2 for the 500 micrometers cavity length lasers. High slope efficiency of 1.3W/A for 1000 micrometers cavity length lasers was obtained, recorded CW output power at room temperature has reached 2.3W. The measured characteristics temperature T(subscript 0$. is as high as 185K.