Electrical properties of Al2O3 film deposited at low temperatures
暂无分享,去创建一个
Seong-Gyu Im | W. Ha | M. H. Choo | S. Im
[1] S. Addepalli,et al. Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy , 2000 .
[2] H. Klauk,et al. Fast organic thin-film transistor circuits , 1999, IEEE Electron Device Letters.
[3] G. Eisenstein,et al. Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y2O3, Ta2O5 and Al2O3 thin film , 1998 .
[4] Jae-Won Park,et al. Irradiation‐induced decomposition of Al2O3 during Auger electron spectroscopy analysis , 1996 .
[5] P. J. Reucroft,et al. Fabrication of aluminum oxide thin films by a low‐pressure metalorganic chemical vapor deposition technique , 1993 .
[6] G. Samsonov,et al. The Oxide Handbook , 1973 .